The First Fabricated Dual-Band Uncooled Infrared Microbolometer Detector with a Tunable Micro-Mirror Structure

2012-04-27
Keskin, Selcuk
Akın, Tayfun
This paper presents the first fabricated dual-band uncooled resistive infrared thermal microbolometer implemented with a resistive microbolometer and a tunable micro-mirror structure. Tunable reflective micro-mirrors are suspended underneath the suspended resistive microbolometers having a 35 mu m pixel pitch, and they are switched between two positions by the application of an electrostatic force for obtaining different responses in two wavelength infrared atmospheric windows, namely the 3-5 and 8-14 mu m, by tuning the optical tunable resonant cavity. This approach allows assessing the actual temperature of the viewed scene by comparing the responses of the detector in these two wavelength infrared atmospheric windows. The absorption coefficients of the detector are simulated by using the Cascaded Transmission Line (CTL) model, and the sacrificial layer thicknesses are optimized to obtain maximum absorption from these two wavelength regions. The absorption coefficients obtained from the measurements are in correspondence with the simulations. The responsivity measurements results shows that the absorption is decreased in an amount of 17.9 % in the 3-5 mu m spectral band, while the absorption is increased in an amount of 8.5 % in the 8-14 mu m spectral band, depending on the micro-mirror position. These initial results are promising for the dual-band detection using uncooled infrared microbolometer detectors.

Suggestions

A low-cost small pixel uncooled infrared detector for large focal plane arrays using a standard CMOS process
Eminoglu, S; Tanrikulu, MY; Tezcan, DS; Akın, Tayfun (2002-04-03)
This paper reports the development of a low-cost, small pixel uncooled infrared detector using a standard CMOS process. The detector is based on a suspended and thermally isolated p(+)-active/n-well diode whose forward voltage changes due to an increase in the pixel temperature with absorbed infrared radiation. The detector is obtained with simple post-CMOS etching steps on dies fabricated using a standard n-well CMOS process. The post-CMOS process steps are achieved without needing any deposition or lithog...
Development of high fill factor and high performance uncooled infrared detector pixels
Küçük, Şeniz Esra; Akın, Tayfun; Department of Electrical and Electronics Engineering (2011)
This thesis presents the design, fabrication and characterization of high performance and high fill factor surface micromachined uncooled infrared resistive microbolometer detectors which can be used in large format focal plane arrays (FPAs). The detector pixels, which have a pixel pitch of 25 μm, are designed and fabricated as two-level structures using the enhanced sandwich type resistor while the active material is selected as Yttrium Barium Copper Oxide (YBCO). First level of the pixel structure is allo...
Development of high performance uncooled infrared detector materials
Kebapçı, Başak; Akın, Tayfun; Turan, Raşit; Department of Micro and Nanotechnology (2011)
This thesis reports both the optimizations of the vanadium oxide (VOx) thin film as an active infrared detector material by the magnetron sputtering deposition method and its use during fabrication of proper resistors for the microbolometers. Vanadium oxide is a preferred material for microbolometers, as it provides high TCR value, low noise, and reasonable resistance, and a number of high-tech companies have used this material to obtain state-of-the-art microbolometer arrays. This material is first used in...
Development and characterization of low-cost uncooled infrared sensors for commercial applications
Tankut, Firat; Akın, Tayfun; Eminoğlu, Selim; Department of Electrical and Electronics Engineering (2013)
This thesis reports the study on the development and characterization of low-cost uncooled microbolometer type infrared detectors, which are fabricated using standard CMOS and MEMS processes. Characterization of the detectors is the first step of developing infrared sensors with better performance. The characterized pixel has a 70 μm pitch and includes 4 serially connected diodes as the detector circuit. Thermal conductance (Gth), temperature sensitivity (TC) and, optical absorption are measured in scope of...
Low-cost uncooled infrared detector arrays in standard CMOS
Eminoglu, S; Tanrikulu, MY; Akın, Tayfun (2003-04-25)
This paper reports the development of a low-cost 128 x 128 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated CMOS p(+)-active/n-well diodes. The FPA is fabricated using a standard 0.35 mum CMOS process followed by simple post-CMOS bulk micromachining that does not require any critical lithography or complicated deposition steps; and therefore, the cost of the uncooled FPA is almost equal to the cost of the CMOS chip. The post-CMOS fabrication steps include an RIE etching to...
Citation Formats
S. Keskin and T. Akın, “The First Fabricated Dual-Band Uncooled Infrared Microbolometer Detector with a Tunable Micro-Mirror Structure,” 2012, vol. 8353, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49316.