Gold deposition on GaAs(001) surfaces: Molecular-dynamics simulations

Date

2002-07-01

Author

Erkoç, Şakir
Amirouche, L
Rouaiguia, L

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We have simulated the gold deposition on arsenic and gallium terminated GaAs(001) surfaces at low and room temperatures. It has been found that gallium terminated surface is relatively less stable in comparison to the arsenic terminated surface. On the other hand, a single gold adatom on the surface has different characteristics than full coverage gold atoms on the surface; a single gold atom diffuses into the surface at room temperature. Simulations have been performed by considering classical molecular-dynamics technique using an empirical many-body potential energy function comprising two- and three-body atomic interactions.

Subject Keywords

GaAs(001) surfaces, Molecular-dynamics, Empirical potentials

URI

https://hdl.handle.net/11511/51618

Journal

INTERNATIONAL JOURNAL OF MODERN PHYSICS C

DOI

https://doi.org/10.1142/s0129183102003498

Collections

Department of Physics, Article

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Citation Formats

Ş. Erkoç, L. Amirouche, and L. Rouaiguia, “Gold deposition on GaAs(001) surfaces: Molecular-dynamics simulations,” INTERNATIONAL JOURNAL OF MODERN PHYSICS C, pp. 759–769, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/51618.