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A computer simulation of amorphous silicon

Dereli, Guelay
Yalabık, M.Cemal
Ellialtıoğlu, Şinasi
n this work we simulated the growth of amorphous silicon on a substrate of a two-layer-slab of crystalline silicon with various surface indices. We used the Lennard-Jones form for the pair potentials and the Axilrod-Teller form for the three-body potentials. The growth is realized by means of a continuum Monte-Carlo method and the radial distribution functions are compared for various cases