Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Germanium solar cells prepared by ion implantation
Date
2013-09-01
Author
Kabacelik, Ismail
Turan, Raşit
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
182
views
0
downloads
Cite This
Development of Ge solar cells for multijunction solar cells, where the p-n junction is formed by ion implantation is investigated. Ge samples are doped by phosphorus (P) ions having 60 keV energy at dose ratios of 1x10(13), 1x10(14), 1x10(16) ve 1x10(16) ions/cm(2) at room temperature. The influences of P concentration and activation temperature on Ge solar cells is investigated. P concentration and layer resistance are measured by secondary ion mass spectrometry (SIMS) and a 4-point probe, respectively. Layer resistances of Ge samples are observed to vary as a function of concentration and temperature. The short circuit currents (I-sc) and open circuit voltages (V-oc) of the Ge solar cells is compared through examination of the I-V curves of the cells with respect to concentration and temperature. Besides, alpha-Si thin films are introduced as anti-reflection coatings (ARCs) via DC sputtering method and the impact of ARCs on I-sc and V-oc is investigated. The ARCs is observed to increase the I-sc's of all four samples with respect to uncoated samples.
Subject Keywords
Germanium
,
Ion-implantation
,
Solar cell
URI
https://hdl.handle.net/11511/55179
Journal
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Dual-band high-frequency metamaterial absorber based on patch resonator for solar cell applications and its enhancement with graphene layers
Ustunsoy, Mehmet Pasa; Sabah, Cumali (2016-12-05)
In this paper, a dual-band high-frequency metamaterial absorber based on patch resonator is designed and analyzed for solar cells. In order to obtain a metamaterial absorber, metal-semiconductor-metal layers are combined. The results of the designed structure are shown in the infrared and visible ranges of solar spectrum. Structural parameters and dimensions of the device have a significant importance on the performance of the designed absorber. The simulations are carried out with full-wave electromagnetic...
DESIGN, FABRICATION AND CHARACTERIZATION OF INTERDIGITATED BACK CONTACT SOLAR CELLS
Ciftpinar, Emine Hande; Turan, Raşit; Yerci, Selçuk; Department of Micro and Nanotechnology (2022-4-22)
The design and development of high-efficiency interdigitated back contact (IBC) solar cells have been studied within the scope of this thesis. Developing a totally industry-compatible, lithography-free, high-throughput process flow for IBC cell fabrication was the main motivation of the thesis. For this, a detailed simulation study was conducted using Quokka 2 software to optimize the rear side cell geometry and understand the effect of bulk and layer properties on the device performance. After determining ...
PASSIVATION OF SILICON SOLAR CELLS VIA LOW TEMPERATURE WET CHEMICAL OXIDATION
KÖKBUDAK, GAMZE; Çiftpınar, Emine Hande; DEMİRCİOĞLU, OLGU; Turan, Raşit (2016-12-01)
In the development of high efficiency crystalline Si solar cells, decreasing bulk and surface recombination velocities of the minority carriers is vital. As the bulk recombination could be suppressed by enhancing the material quality, the effect of surface recombination on cell performance becomes more dominant. Also, recent studies have revealed that the area under the metal contacted region needs to be passivated to minimize the carrier recombination. The passivation of front and back surface of the cell ...
Thin film (6,5) semiconducting single-walled carbon nanotube metamaterial absorber for photovoltaic applications
Obaidullah, Madina; Esat, Volkan; Sabah, Cumali (2017-12-01)
A wide-band (6,5) single-walled carbon nanotube metamaterial absorber design with near unity absorption in the visible and ultraviolet frequency regions for solar cell applications is proposed. The frequency response of the proposed design provides wide-band with a maximum of 99.2% absorption. The proposed design is also simulated with (5,4), (6,4), (7,5), (9,4), and (10,3) chiralities, and results are compared to show that the proposed design works best with (6,5) carbon nanotube (CNT) but also good for ot...
Radial junction solar cells prepared on single crystalline silicon wafers by metal-assisted etching
BAYTEMİR, Gulsen; ES, FIRAT; ALAGOZ, Arif Sinan; Turan, Raşit (2017-05-01)
Radial junction solar cells have been proposed as an alternative device geometry to conventional planar solar cells with its remarkable electrical and optical performance. In this geometry, densely packed nano/micropillars allow minority carrier collection in the radial direction and shorten carrier diffusion length to p-n junction. Besides, reduced reflection from surface and increased light trapping in nano/micropillars enhance solar cell efficiency. In this study, photolithography and metal-assisted etch...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
I. Kabacelik and R. Turan, “Germanium solar cells prepared by ion implantation,”
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
, pp. 948–953, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/55179.