THE CRITICAL-BEHAVIOR OF THE RAMAN INTENSITIES OF THE LATTICE MODES IN AMMONIUM HALIDES

1993-03-01
Our observed Raman intensities for the lattice modes of TA(M)(93 cm-1) and TO(M)(144cm-1) of NH4Cl were used to extract the critical exponents for the order parameter in this crystal system. Our exponent values are 0.15+/-0.02 (1st order, T(c)=241 K, P=0), 0.24+/-0.04 (tricritical, T(c)=255 K, P=1.5 kbar) and 0.33+/-0.10 (2nd order, T(c)=268 K, P=3 kbar), which agree with the model predictions.
JOURNAL OF MOLECULAR STRUCTURE

Suggestions

The Electronıc-Structure Of In1-Xgaxp Alloy By The Recursıon Method
ELHASAN, M; Tomak, Mehmet (Springer Science and Business Media LLC, 1988-03-01)
The electronic structure calculation of In1−x Ga x P alloy using the recursion method is reported. A five-orbitals,sp 3 s *, per atom model is used in the tight-binding representation of the Hamiltonian. The local densities of states are calculated for In, Ga and P sites in a cluster of 216 atoms. The results are in reasonably good agreement with previous calculations.
The electronic band structure of III (in, al, ga)-v (n, as, sb) compounds and ternary alloys
Mohammad, Rezek Mahmoud Salim; Katırcıoğlu, Şenay; Department of Physics (2005)
In this work, the electronic band structure of III (In, Al, Ga) - V (N, As, Sb) compounds and their ternary alloys have been investigated by density functional theory (DFT) within generalized gradient approximation (GGA) and empirical tight binding (ETB) calculations, respectively. The present DFT-GGA calculations have shown direct band gap structures in zinc-blende phase for InN, InAs, InSb, GaN, and GaAs. However, indirect band gap structures have been obtained for cubic AlN, AlSb and AlAs com- pounds; he...
The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x, alloys
Mohammad, Rezek; Katırcıoğlu, Şenay (Elsevier BV, 2009-02-05)
The band cap bowings of InNxAs1-x, InNxSb1-x, and InAsxSb1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp(3)d(2) basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InNxAs1-x and InNxSb1-x compared to InAsxSb1-x alloys. M...
Calculation of the Raman Linewidths of Lattice Modes Close to the alpha-beta Transition in Quartz
Lider, Mustafa Cem; Yurtseven, Hasan Hamit (Walter de Gruyter GmbH, 2012-12-01)
The Raman frequencies of the lattice modes (147 cm(-1) and 207 cm(-1)) are analyzed for the alpha-beta transition in quartz according to a power-law formula with the critical exponent by using the experimental data. The temperature dependence of the Raman frequency is associated with the order parameter (polarization P) for this transition in the quartz crystal.
The positional effect of dodecagonal holes on C-56 structure
Türker, Burhan Lemi (Elsevier BV, 2004-05-14)
Some C-56 isomers obtained theoretically from C-60 structure by deleting two C-2 units and bonds adjacent to those have been subjected to AM1 (UHF) type semiempirical quantum chemical calculations. Positional effects of dodecagonal (cyclododecahexaene rings) holes on the stabilities are discussed in the case of neutral as well as monovalent cationic form of these species which are all stable but endothermic in nature.
Citation Formats
H. H. Yurtseven, “THE CRITICAL-BEHAVIOR OF THE RAMAN INTENSITIES OF THE LATTICE MODES IN AMMONIUM HALIDES,” JOURNAL OF MOLECULAR STRUCTURE, pp. 175–178, 1993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57530.