The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

1997-01-01
Salamov, BG
Civi, M
Altindal, S
Kasap, M
Bulur, Enver
This paper describes for the first time an application of an ionization type semiconductor photographic system using a chalcopyrite-type semiconductor (CuInSe2) copper-indium-diselenide film as a target for rapid visulization of resistivity inhomogeneities. The CuInSe2 semiconductor films with a resistivity of 10(7) Omega cm (thickness 0.25 mu m) in a planar gas discharge cell, have been studied. A measurement is realized by recording the spatial distribution of the gas discharge radiation intensity between two parallel electrodes. A gas discharge gap has been formed by a dielectric separator with thicknesses ranging from 40 to 60 mu m. A discharge has been realized in air at pressures from 760-60 Torr. The assessment of the resistivity inhomogeneities is then based on an analysis of the discharge radiation, visualized by a photograph taken through the SnO2 film.

Citation Formats
B. Salamov, M. Civi, S. Altindal, M. Kasap, and E. Bulur, “The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films,” JOURNAL OF INFORMATION RECORDING, vol. 23, no. 5, pp. 437–445, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/63313.