The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

1997-01-01
Salamov, BG
Civi, M
Altindal, S
Kasap, M
Bulur, Enver
This paper describes for the first time an application of an ionization type semiconductor photographic system using a chalcopyrite-type semiconductor (CuInSe2) copper-indium-diselenide film as a target for rapid visulization of resistivity inhomogeneities. The CuInSe2 semiconductor films with a resistivity of 10(7) Omega cm (thickness 0.25 mu m) in a planar gas discharge cell, have been studied. A measurement is realized by recording the spatial distribution of the gas discharge radiation intensity between two parallel electrodes. A gas discharge gap has been formed by a dielectric separator with thicknesses ranging from 40 to 60 mu m. A discharge has been realized in air at pressures from 760-60 Torr. The assessment of the resistivity inhomogeneities is then based on an analysis of the discharge radiation, visualized by a photograph taken through the SnO2 film.
JOURNAL OF INFORMATION RECORDING

Suggestions

The ionization type semiconductor photographic system based on high-resistivity polymeric cathode
Salamov, BG; Kucukyavuz, Z; Kucukyavuz, S; Nugay, N; Salamova, UR (1996-01-01)
A device for detecting inhomogeneities in high-resistivity poly(N-vinylimidazole) polymeric semiconductor film of large diameter (40-60 mm) is described. A measurement of homogeneity is realized by recording the spatial distribution of the gas discharge glow intensity between two parallel electrodes. The polymeric films with a resistivity of 10(6)-10(8) Omega cm (thickness 40-80 mu m) in a planar gas discharge cell, have been studied. A gas discharge gap has been formed by a dielectric separator with the th...
Development of high performance uncooled infrared detector materials
Kebapçı, Başak; Akın, Tayfun; Turan, Raşit; Department of Micro and Nanotechnology (2011)
This thesis reports both the optimizations of the vanadium oxide (VOx) thin film as an active infrared detector material by the magnetron sputtering deposition method and its use during fabrication of proper resistors for the microbolometers. Vanadium oxide is a preferred material for microbolometers, as it provides high TCR value, low noise, and reasonable resistance, and a number of high-tech companies have used this material to obtain state-of-the-art microbolometer arrays. This material is first used in...
A photon counting dynamic digital lock-in amplifier for background suppression in glow discharge atomic emission spectrometry
Gokmen, A; Ulgen, A; Yalcin, S (1996-01-15)
A photon counting dynamic digital lock-in amplifier, (PC-DDLIA), has been developed for the suppression of Ar lines in glow discharge lamp atomic emission spectrometry, (GDL-AES). The experimental set-up consists of a Grimm-type GDL, a prism-type scanning monochromator, photon counting electronics, an Apple Ile computer with an interface card and a computer controllable high voltage power supply. The photon counting electronics are designed to convert the photon pulses to logic pulses. A discriminator is us...
The effect of antenna in the forward model of near field microwave imaging systems
Dalkilic, Akin; Alatan, Lale (2019-07-01)
A fast and accurate forward problem solver for near-field microwave imaging systems is developed by considering the electric field intensity as the measured quantity. Since the antenna port voltage values will be the real measured quantity in practical applications, the effects of transmitting/receiving antennas in the forward problem model is investigated.
Development of high performance active materials for microbolometers
Eroğlu, Numan; Akın, Tayfun; Turan, Raşit; Department of Micro and Nanotechnology (2011)
This thesis reports the development of Vanadium Tungsten Oxide (VWO) film as an active detector material for uncooled infrared detectors by using the reactive DC magnetron co-sputtering method. VWO is a doped form of the Vanadium Oxide (VOx) which is known as a prominent material for uncooled infrared detectors with its high TCR, low resistivity, and low noise properties. VOx is a widely preferred material for commercialized uncooled infrared detectors along with its drawbacks. Fabrication is fairly difficu...
Citation Formats
B. Salamov, M. Civi, S. Altindal, M. Kasap, and E. Bulur, “The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films,” JOURNAL OF INFORMATION RECORDING, pp. 437–445, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/63313.