The ionization type semiconductor photographic system based on high-resistivity polymeric cathode

Date

1996-01-01

Author

Salamov, BG
Kucukyavuz, Z
Kucukyavuz, S
Nugay, N
Salamova, UR

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A device for detecting inhomogeneities in high-resistivity poly(N-vinylimidazole) polymeric semiconductor film of large diameter (40-60 mm) is described. A measurement of homogeneity is realized by recording the spatial distribution of the gas discharge glow intensity between two parallel electrodes. The polymeric films with a resistivity of 10(6)-10(8) Omega cm (thickness 40-80 mu m) in a planar gas discharge cell, have been studied. A gas discharge gap has been formed by a dielectric separator with the thicknesses ranging from 15 to 25 mu m. A discharge has been realized in air at pressures from 60-760 Torr. The possibilities of the visualization have been evaluated, i.e. a local change of the resistance inhomogeneity is determined by a local change of discharge glow intensity the resolution of which is determined by method of its recording.

Subject Keywords

Semiconductor Photographic System, High-Resistivity Poly (N-Vinylimidazole) Polymeric Cathode, Resistivity Inhomogeneities

URI

https://hdl.handle.net/11511/68091

Journal

JOURNAL OF INFORMATION RECORDING

Collections

Department of Chemistry, Article

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Citation Formats

B. Salamov, Z. Kucukyavuz, S. Kucukyavuz, N. Nugay, and U. Salamova, “The ionization type semiconductor photographic system based on high-resistivity polymeric cathode,” JOURNAL OF INFORMATION RECORDING, pp. 325–335, 1996, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68091.