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ENSEMBLE MONTE-CARLO SIMULATION OF RAMAN-SCATTERING IN GAAS
Date
1994-01-28
Author
GUNCER, SE
FERRY, DK
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A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the (Gamma) conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 X 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.
Subject Keywords
Engineering, Electrical & Electronic
,
Optics; Physics, Applied
URI
https://hdl.handle.net/11511/65598
Collections
Department of Physics, Conference / Seminar
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S. GUNCER and D. FERRY, “ENSEMBLE MONTE-CARLO SIMULATION OF RAMAN-SCATTERING IN GAAS,” 1994, vol. 2142, p. 182, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65598.
