Simulation of dissolution of silicon in an indium solution by spectral methods

Date

2002-09-01

Author

Coskun, AU
Yener, Y
Arinc, F

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The results of a numerical simulation of natural convection due to concentration gradients during dissolution of silicon in an indium solution in a horizontal substrate-solution-substrate system are presented. The Chebyshev-Tau spectral method has been used for the simulations. The results are in very good agreement with the experimental data available in the literature. It is concluded that the discrepancies in the dissolution depths between the previous simulations and experimental data, especially at the earlier stages of the process, are mostly due to combined effects of uncertainties in the predicted properties and insufficient numerical accuracy.

Subject Keywords

Modelling and Simulation, General Materials Science, Mechanics of Materials, Condensed Matter Physics, Computer Science Applications

URI

https://hdl.handle.net/11511/66383

Journal

MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

DOI

https://doi.org/10.1088/0965-0393/10/5/305

Collections

Department of Mechanical Engineering, Article

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Citation Formats

A. Coskun, Y. Yener, and F. Arinc, “Simulation of dissolution of silicon in an indium solution by spectral methods,” MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, pp. 539–550, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/66383.