Effects of surface potential fluctuations on DLTS of MOS structure

Date

1996-02-01

Author

Ozder, S
Atilgan, I
Katircioglu, B

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Although the conventional large signal deep-level transient spectroscopy (DLTS) technique is immune to surface potential fluctuations resulting from interface charge inhomogeneities in a MOS structure, in energy resolved, small signal DLTS, the eventual surface potential fluctuation should be considered. In this paper, the effect of the potential fluctuation on the temperature-scan DLTS signal for a given gate bias has been carried out. In fact, this effect shifts the DLTS peak position to lower temperatures and decreases the peak amplitude, leading to an apparent energy position and lower Di, values, respectively.

Subject Keywords

Level transient spectroscopy, Interface states, Emission, Traps

URI

https://hdl.handle.net/11511/67117

Journal

SOLID-STATE ELECTRONICS

DOI

https://doi.org/10.1016/0038-1101(95)00122-0

Collections

Department of Physics, Article

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Citation Formats

S. Ozder, I. Atilgan, and B. Katircioglu, “Effects of surface potential fluctuations on DLTS of MOS structure,” SOLID-STATE ELECTRONICS, pp. 243–249, 1996, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67117.