The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface

2018-09-01
KILIÇ, ALİ YAVUZ
TANSEL, TUNAY
HOŞTUT, MUSTAFA
ELAGÖZ, SEZAİ
ERGÜN, YÜKSEL
We report on the optical properties of InAs/AlSb/GaSb based Type-II superlattice N-structure with p on n configuration. The detector structure is designed to operate in the mid wavelength infrared range with 50% cut-off wavelength of 4.88 mu m at 79 K. Electronic properties of N-structure such as heavy hole-light hole splitting energies are optimized by a first principles approach taking into account InAlAs interface bonding between InAs/AlSb layers. A responsivity of 1.13 A/Wat 3.2 mu m was measured under zero bias, with a corresponding quantum efficiency of 44%. An analytical model was developed in order to identify the contribution of quantum efficiency (QE) constituents. The overall QE contains a 56% contribution from the quasi-neutral p-region, 36% from the quasi-neutral n-region and 8% from the depletion region.

Citation Formats
A. Y. KILIÇ, T. TANSEL, M. HOŞTUT, S. ELAGÖZ, and Y. ERGÜN, “The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 33, no. 9, pp. 0–0, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67969.