Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

Date

2009-05-05

Author

ÖZDEMİR, Orhan
Anutgan, Mustafa
Aliyeva-Anutgan, Tamila
Atilgan, Ismail
Katircioglu, Bayram

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

85
views

0
downloads

Boron nitride (BN) thin film was grown by plasma enhanced chemical vapor deposition (PECVD) technique and was investigated by UV-Visible transmission, Fourier transform infrared (FTIR) and ac conductance spectroscopies. Mainly the density of electronic localized states (D-it) at BN/Si interface was obtained by continuum and statistical models of ac conductance through an MIS structure (Al/BN film/Si). The origins of the electronic defects have been outlined and discussed within the frame of a nitrogen deficient turbostratic structure where more or less parallel hexagonal crystallites of distributed size would be embedded in a disordered phase. The nitrogen deficiency of the film was tried to be restored by annealing treatment under nitrogen atmosphere at two temperatures.

Subject Keywords

Mechanical Engineering, Materials Chemistry, Mechanics of Materials, Metals and Alloys

URI

https://hdl.handle.net/11511/68032

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2008.08.014

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Optical dynamics of MgO/Ga4Se3S interface Qasrawi, A. F.; Abd-Alrazq, Mariam M.; Hasanlı, Nızamı (Elsevier BV, 2014-01-15) A new p-n interface made of p-type MgO as an optical window to the n-type Ga4Se3S crystals is investigated by means of optical reflectance, transmittance and absorbance in the incident light wavelength (k) range of 200-1100 nm. The reflectivity spectral analysis as a function of angle of incidence for MgO, Ga4Se3S and the Ga4Se3S/MgO layers revealed Brewster angles of 75 degrees, 80 degrees and 70 degrees with the corresponding dielectric constants of 13.93, 32.16 and eMgO 7: 55eGa(4)Se(3)S, respectively. T...
Size dependent stability and surface energy of amorphous FePt nanoalloy Akdeniz, Mahmut Vedat; Mehrabov, Amdulla (Elsevier BV, 2019-06-05) The effects of particle size (2-6 nm) and temperature (300-2700 K) on the stability and local structural evolutions of amorphous equiatomic FePt bulk/nanoalloys have been investigated by combining Embedded Atom Model (EAM) with classical molecular dynamics (MD) simulation method. The three dimensional (3D) atomic configuration of amorphous FePt NPs by means of Voronoi analysis reveals that, deformed bcc (d-bcc) and icosahedron (d-ico) type structures are most probable local atomic configurations for 2-6 nm ...
Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids BACAKSIZ, EMİN; YILMAZ, ŞERİFE; Parlak, Mehmet; Varilci, A.; Altunbas, M. (Elsevier BV, 2009-06-10) ZnO thin films were deposited on quartz substrate at 550 degrees C by using spray pyrolysis method and subsequently annealed between 600-900 degrees C with a step of 100 degrees C. The characterizations of the structural and optical properties of the films have been carried out by means of X-ray diffraction, scanning electron microscopy (SEM) and optical transmittance measurements. XRD ans SEM images indicated that annealing temperature did not play a great role on the microstructure of ZnO films. ZnO thin ...
CONDUCTING POLYMERS OF ANILINE .1. ELECTROCHEMICAL SYNTHESIS OF A CONDUCTING COMPOSITE DOGAN, S; Akbulut, Ural; Toppare, Levent Kamil (Elsevier BV, 1992-11-01) We describe an electrochemical synthesis of a conducting composite of polyaniline. Poly(bisphenol A carbonate) was used as the insulating polymer matrix. Composite characterization was made using FT-IR, SEM and DSC data. The conductivities of the composites seemed to be in the order of pure polyaniline as prepared by the same method. Moreover, the above-mentioned methods reveal that the resultant composites have different properties compared to a simple mechanical mixture of the two polymers.
Electrochemical decomposition of SiO2 pellets to form silicon in molten salts Ergul, Emre; Karakaya, İshak; Erdogan, Metehan (Elsevier BV, 2011-01-21) Direct electrochemical reduction of porous SiO2 pellets in molten CaCl2 salt and CaCl2-NaCl salt mixture was investigated by applying 2.8 V potential. The study focused on the effects of temperature, particle size of SiO2 powder starting material and the behavior of cathode contacting materials during electrochemical reduction process. The starting materials and the electrolysis products were characterized by X-ray diffraction analysis and scanning electron microscopy mainly. The studies showed that smaller...

Citation Formats

O. ÖZDEMİR, M. Anutgan, T. Aliyeva-Anutgan, I. Atilgan, and B. Katircioglu, “Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 794–803, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68032.