Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

2009-05-05
ÖZDEMİR, Orhan
Anutgan, Mustafa
Aliyeva-Anutgan, Tamila
Atilgan, Ismail
Katircioglu, Bayram
Boron nitride (BN) thin film was grown by plasma enhanced chemical vapor deposition (PECVD) technique and was investigated by UV-Visible transmission, Fourier transform infrared (FTIR) and ac conductance spectroscopies. Mainly the density of electronic localized states (D-it) at BN/Si interface was obtained by continuum and statistical models of ac conductance through an MIS structure (Al/BN film/Si). The origins of the electronic defects have been outlined and discussed within the frame of a nitrogen deficient turbostratic structure where more or less parallel hexagonal crystallites of distributed size would be embedded in a disordered phase. The nitrogen deficiency of the film was tried to be restored by annealing treatment under nitrogen atmosphere at two temperatures.
JOURNAL OF ALLOYS AND COMPOUNDS

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Citation Formats
O. ÖZDEMİR, M. Anutgan, T. Aliyeva-Anutgan, I. Atilgan, and B. Katircioglu, “Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 794–803, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68032.