Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

Date

2009-05-05

Author

ÖZDEMİR, Orhan
Anutgan, Mustafa
Aliyeva-Anutgan, Tamila
Atilgan, Ismail
Katircioglu, Bayram

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Boron nitride (BN) thin film was grown by plasma enhanced chemical vapor deposition (PECVD) technique and was investigated by UV-Visible transmission, Fourier transform infrared (FTIR) and ac conductance spectroscopies. Mainly the density of electronic localized states (D-it) at BN/Si interface was obtained by continuum and statistical models of ac conductance through an MIS structure (Al/BN film/Si). The origins of the electronic defects have been outlined and discussed within the frame of a nitrogen deficient turbostratic structure where more or less parallel hexagonal crystallites of distributed size would be embedded in a disordered phase. The nitrogen deficiency of the film was tried to be restored by annealing treatment under nitrogen atmosphere at two temperatures.

Subject Keywords

Mechanical Engineering, Materials Chemistry, Mechanics of Materials, Metals and Alloys

URI

https://hdl.handle.net/11511/68032

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2008.08.014

Collections

Department of Physics, Article

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Citation Formats

O. ÖZDEMİR, M. Anutgan, T. Aliyeva-Anutgan, I. Atilgan, and B. Katircioglu, “Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 794–803, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68032.