Electrical transport mechanism in boron nitride thin film

Date

2009-06-01

Author

ÖZDEMİR, Orhan
Anutgan, Mustafa
Aliyeva-Anutgan, Tamila
Atilgan, Ismail
Katircioglu, Bayram

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Both dc and ac transport characteristics of plasma enhanced chemical vapor deposited (PECVD) boron nitride (BN) thin film was investigated by dc current vs. dc voltage measurement at different temperatures and admittance vs. gate voltage at various frequencies/temperatures, respectively. MIM metal (Al)-insulator (BN)-metal (Al) or MIS metal (Al)-BN-semiconductor (p-Silicon) test devices were conventionally produced. Both conductivity anisotropy and dc/ac detailed transport mechanism were analyzed within the frame of a turbostratic structure (t-BN), interfacing the substrate by a thin amorphous layer (a-BN). This defective BN film has been justified by both infrared (IR) analysis and indirectly by the resulting electrical transport behavior. Transport and its Variations as a function of temperature/frequency are in agreement with a hopping mechanism across Gauss-like energy distributed localized deep traps.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Ceramics and Composites

URI

https://hdl.handle.net/11511/68169

Journal

JOURNAL OF NON-CRYSTALLINE SOLIDS

DOI

https://doi.org/10.1016/j.jnoncrysol.2009.04.034

Collections

Department of Physics, Article

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Citation Formats

O. ÖZDEMİR, M. Anutgan, T. Aliyeva-Anutgan, I. Atilgan, and B. Katircioglu, “Electrical transport mechanism in boron nitride thin film,” JOURNAL OF NON-CRYSTALLINE SOLIDS, pp. 851–859, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68169.