High mobility, low voltage operating C-60 based n-type organic field effect transistors

2011-10-01
Schwabegger, G.
Ullah, Mujeeb
Irimia-Vladu, M.
Baumgartner, M.
Kanbur, Y.
Ahmed, R.
Stadler, P.
Bauer, S.
Sariciftci, N. S.
Sitter, H.
We report on C-60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene)(BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude). The assembly of metal-oxide and organic passivation layer combines the properties of the high dielectric constant of the metal oxide and the good organic-organic interface between semiconductor and insulator provided by a thin capping layer on top of the AlOx film. This results in OFETs that operate with voltages lower than 500 mV, while exhibiting field effect mobilities exceeding 3 cm(2) V-1 s(-1).
SYNTHETIC METALS

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Citation Formats
G. Schwabegger et al., “High mobility, low voltage operating C-60 based n-type organic field effect transistors,” SYNTHETIC METALS, pp. 2058–2062, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68530.