High mobility, low voltage operating C-60 based n-type organic field effect transistors

Date

2011-10-01

Author

Schwabegger, G.
Ullah, Mujeeb
Irimia-Vladu, M.
Baumgartner, M.
Kanbur, Y.
Ahmed, R.
Stadler, P.
Bauer, S.
Sariciftci, N. S.
Sitter, H.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

77
views

0
downloads

We report on C-60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene)(BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude). The assembly of metal-oxide and organic passivation layer combines the properties of the high dielectric constant of the metal oxide and the good organic-organic interface between semiconductor and insulator provided by a thin capping layer on top of the AlOx film. This results in OFETs that operate with voltages lower than 500 mV, while exhibiting field effect mobilities exceeding 3 cm(2) V-1 s(-1).

Subject Keywords

Mechanical Engineering, Materials Chemistry, Mechanics of Materials, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Metals and Alloys

URI

https://hdl.handle.net/11511/68530

Journal

SYNTHETIC METALS

DOI

https://doi.org/10.1016/j.synthmet.2011.06.042

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

An on-die ultra-low voltage DC-DC step-up converter with voltage doubling LC-tank Jayaweera, H. M. P. C.; Pathirana, W. P. M. R.; Muhtaroglu, Ali (IOP Publishing; 2016-12-01) In this paper we report the design, characterization and verification of a novel on-die ultra-low voltage DC-DC converter circuit for energy harvester applications in 0.18 mu m complementary metal oxide semiconductor (CMOS) technology. The circuit self-starts, does not use off-chip components, and is thus suitable for use in highly integrated low cost systems. The first version of the design has a five-stage charge-pump stimulated by an oscillator with two center-tap inductors. It is validated on a test chi...
Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer GÖKÇEN, MUHARREM; ALTINDAL, ŞEMSETTİN; Karaman, M.; Aydemir, U. (Elsevier BV, 2011-11-01) The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(...
Electrochemical preparation and characterization of carbon fiber reinforced poly (dimethyl siloxane)/polythiophene composites: electrical, thermal and mechanical properties Sankir, M; Kucukyavuz, S; Kucukyavuz, Z (Elsevier BV, 2002-05-10) A series of polydimethylsiloxane (PDMS)/polythiophene (Pth)/carbon fiber (CF) composites was synthesized by electrochemical polymerization using tetrabutylammoniumtetrafluoroborate (TBAFB) as supporting electrolyte and acetonitrile as solvent. Composites were characterized by TGA, SEM, and mechanical tests and conductivity measurements. Conductivities of composites were in the range of 25 S/cm. SEM studies show that CF were coated by PDMS/Pth matrix and well oriented in the matrix. In mechanical tests it ha...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01) Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Phonon dispersions and elastic constants of disordered Pd-Ni alloys Kart, SO; Tomak, Mehmet; Cagin, T (Elsevier BV, 2005-01-31) Phonon frequencies of Pd-Ni alloys are calculated by molecular dynamics (MD) simulation. Lattice dynamical properties computed from Sutton-Chen (SC) and quantum Sutton-Chen (Q-SC) potentials as a function of temperature are compared with each other. We present all interatomic force constants up to the 8th nearest-neighbor shell obtained by using the calculated potential. Elastic constants evaluated by two methods are consistent with each other. The transferability of the potential is also tested. The result...

Citation Formats

G. Schwabegger et al., “High mobility, low voltage operating C-60 based n-type organic field effect transistors,” SYNTHETIC METALS, pp. 2058–2062, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68530.