The Effects of Substrate and Annealing Temperatures on Surface Morphology of Sputtered SnSe Thin Films

Güllü, Hasan Hüseyin
Terlemezoğlu, Makbule
Bayraklı, Özge
Parlak, Mehmet


The Effect of Substrate Temperature on CdZnTe thin films
Doğru, Çiğdem; Terlemezoğlu, Makbule; Bayraklı, Özge; Güllü, Hasan Hüseyin; Parlak, Mehmet (null; 2018-06-17)
The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films
Parlak, Mehmet (1999-06-01)
The correlation between the electrical properties of vacuum evaporated InSe thin films and the growth conditions as well as post depositional annealing has been investigated. The electrical properties of the deposited films have been studied in the temperature range of 50-320 K. The donor levels present in the InSe films have been analysed by applying the single donor-single acceptor model to the electrical data.
The effect of Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by solution deposition
Kayasu, Volkan; Özenbaş, Ahmet Macit (2009-04-01)
Niobium (Nb)-doped lead zirconate titanate thin films (PNZT) were produced by solution deposition with nominal compositions, Pb(1-0.5x)(Zr0.53Ti0.47)(1-x)NbxO3 where x = 0.00-0.07. The effects of sintering temperature, sintering time, variation of thickness in the films and change of niobium content were investigated with regard to phase development, microstructure, and ferroelectric and dielectric characteristics. The best results were obtained in double-layered films (390 nm) sintered at 600 degrees C for...
The effects of carbon content on the properties of plasma deposited amorphous silicon carbide thin films
Sel, Kıvanç; Atılgan, İsmail; Department of Physics (2007)
The structure and the energy band gap of hydrogenated amorphous silicon carbide are theoretically revised. In the light of defect pool model, density of states distribution is investigated for various regions of mobility gap. The films are deposited by plasma enhanced chemical vapor deposition system with various gas concentrations at two different, lower (30 mW/cm2) and higher (90 mW/cm2), radio frequency power densities. The elemental composition of hydrogenated amorphous silicon carbide films and relativ...
The effect of SN content and isothermal transformation temperature on the mechanical properties of austempered ductile cast iron
Özcan, Alper; Atala, Haluk; Department of Metallurgical and Materials Engineering (2003)
In this study the effects of Sn content and isothermal transformation temperature on the ultimate tensile strength (UTS), elongation and hardness of austempered ductile cast iron (ADI) was investigated. To determine the possible effect of Sn on these properties the Sn content of standard GGG30, GGG40 and GGG50 materials were taken as reference, whose chemical compositions vary from 0,016 to 0,050% in terms of Sn. However the Sn content was increased to a maximum of 0,26% for investigating the effect of Sn o...
Citation Formats
H. H. Güllü, M. Terlemezoğlu, Ö. Bayraklı, and M. Parlak, “The Effects of Substrate and Annealing Temperatures on Surface Morphology of Sputtered SnSe Thin Films,” 2017, Accessed: 00, 2021. [Online]. Available: