The effect of Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by solution deposition

2009-04-01
Kayasu, Volkan
Özenbaş, Ahmet Macit
Niobium (Nb)-doped lead zirconate titanate thin films (PNZT) were produced by solution deposition with nominal compositions, Pb(1-0.5x)(Zr0.53Ti0.47)(1-x)NbxO3 where x = 0.00-0.07. The effects of sintering temperature, sintering time, variation of thickness in the films and change of niobium content were investigated with regard to phase development, microstructure, and ferroelectric and dielectric characteristics. The best results were obtained in double-layered films (390 nm) sintered at 600 degrees C for 1 h. Optimum doping level was found in 1% Nb-doped films. For 1% Nb-doped [Pb-0.995(Zr0.53Ti0.47)(0.99)Nb0.01O3] films, remanent polarization (P-r) of 35.8 mu C/cm(2) and coercive field (E-c) of 75.7 kV/cm have been obtained. The maximum dielectric constant was achieved in 1% Nb-doped films which was 689. Ferroelectric and dielectric properties decreased at higher Nb doping levels because of the changes in the grain size and perovskite lattice parameters.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

Suggestions

The effect of Zn concentration on the structural and optical properties of Cd1-xZnxS nanostructured thin films
Isik, M.; Terlemezoglu, M.; Isik, S.; Erturk, K.; Hasanlı, Nızamı (2021-09-01)
The structural and optical properties of electrodeposited Cd1-xZnxS nanostructured thin films were investigated in the present paper for compositions of x = 0, 0.03, 0.06 and 0.09. X-ray diffraction patterns of the deposited thin films consisted of diffraction peaks related to cubic crystal lattice. The atomic compositional ratios were determined by performing energy dispersive spectroscopy measurements. Scanning electron microscopy images indicated that deposited thin films have nanostructured forms. Raman...
The effects of postdeposition annealing conditions on structure and created defects in Zn0.90Co0.10O thin films deposited on Si(100) substrate
Can, Musa Mutlu; Firat, Tezer; Shah, S. Ismat; Bakan, Feray; Oral, Ahmet (2013-03-01)
We analyze the effect of postdeposition annealing conditions on both the structure and the created defects in Zn0.90Co0.10O thin films, which deposited on the Si(100) substrates by the radio frequency magnetron sputtering technique using a homemade target. The dependence of the number and distribution of defects in homogeneously substituted Co+2 for Zn+2 ions in ZnO lattice on the annealing conditions is investigated. Orientations of thin films are in the [0002] direction with a surface roughness changing f...
The nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their amorphous thin films
KARATAY, AHMET; Aksoy, Cagla; YAĞLIOĞLU, HALİME GÜL; ELMALI, Ayhan; Kurum, Ulas; ATEŞ, AYTÜNÇ; Hasanlı, Nızamı (IOP Publishing, 2011-07-01)
We investigated the nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their very thin amorphous films by open aperture (OA) Z-scan and pump-probe techniques. The linear absorption spectra indicated a blue shift in energy with increasing film thickness. This can be attributed to the quantum confinement effect. For both 4 ns and 65 ps pulse durations the two photon absorption coefficients of Ga0.90In0.10Se and Ga0.85In0.15Se crystals increased w...
Preparation of BaxSr1-xTiO3 thin films by chemical solution deposition and their electrical characterization
Adem, Umut; Özenbaş, Ahmet Macit; Department of Metallurgical and Materials Engineering (2003)
In this study, barium strontium titanate (BST) thin films with different compositions (Ba0.9Sr0.1TiO3, Ba0.8Sr0.2TiO3, Ba0.7Sr0.3TiO3, Ba0.5Sr0.5TiO3) were produced by chemical solution deposition technique. BST solutions were prepared by dissolving barium acetate, strontium acetate and titanium isopropoxide in acetic acid and adding ethylene glycol as a chelating agent and stabilizer to this solution, at molar ratio of acetic acid/ethylene glycol, 3:1. The solution was then coated on Si and Pt//Ti/SiO2/Si ...
THE STRUCTURAL AND ELECTRONIC PROPERTIES OF BNxAs1-x ALLOYS
Mohammad, Rezek; Katırcıoğlu, Şenay (2012-10-01)
The structural and electronic properties of BNxAs1-x alloys have been investigated in the total range of nitrogen by the FP-LAPW method based on DFT within the EV-PW-GGA scheme. The equilibrium lattice constants, bulk moduli, first-order pressure derivatives of the bulk moduli, and cohesive energies have been obtained by total energy calculations of the alloys after both volume and geometry optimizations. The large bowing parameters found for the lattice constants and bulk moduli have demonstrated that the ...
Citation Formats
V. Kayasu and A. M. Özenbaş, “The effect of Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by solution deposition,” JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, pp. 1157–1163, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30591.