The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films

Date

1999-06-01

Author

Parlak, Mehmet

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The correlation between the electrical properties of vacuum evaporated InSe thin films and the growth conditions as well as post depositional annealing has been investigated. The electrical properties of the deposited films have been studied in the temperature range of 50-320 K. The donor levels present in the InSe films have been analysed by applying the single donor-single acceptor model to the electrical data.

Subject Keywords

Selenide single-crystals, Indium selenide, Scattering mechanisms, Elemental evaporation, Optical-properties, Growth, Defects

URI

https://hdl.handle.net/11511/48237

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1023/a:1008980919971

Collections

Department of Physics, Article

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Citation Formats

M. Parlak, “The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 313–319, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48237.