The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films

The correlation between the electrical properties of vacuum evaporated InSe thin films and the growth conditions as well as post depositional annealing has been investigated. The electrical properties of the deposited films have been studied in the temperature range of 50-320 K. The donor levels present in the InSe films have been analysed by applying the single donor-single acceptor model to the electrical data.


Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method
Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01)
Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Accurate formation energies of charged defects in solids: A systematic approach
Vinichenko, Dmitry; Sensoy, Mehmet Gokhan; Friend, Cynthia M.; Kaxiras, Efthimios (2017-06-30)
Defects on surfaces of semiconductors have a strong effect on their reactivity and catalytic properties. The concentration of different charge states of defects is determined by their formation energies. First-principles calculations are an important tool for computing defect formation energies and for studying the microscopic environment of the defect. The main problem associated with the widely used supercell method in these calculations is the error in the electrostatic energy, which is especially pronou...
Effect of post-processing heat treatment on the mechanical properties of inconel 718 fabricated by selective laser melting
Özer, Seren; Dericioğlu, Arcan Fehmi; Department of Metallurgical and Materials Engineering (2020)
In this study, effect of the building direction and post-processing heat treatments on the microstructure and high temperature mechanical properties of as-fabricatedInconel 718 alloys have been investigated. Inconel 718 samples were fabricated in two different building directions such that their longitudinalaxes wereeither parallel (horizontally built) or perpendicular (vertically built) to the building plate. During the selective laser melting (SLM)process, some undesired features can...
The Effects of High Frequency RF Capacitively Coupled Plasma on Tensile Strain and Functional Groups of PAN based Carbon Fiber
Erözbek Güngör, Ümmügül (2014-04-25)
In this study, high frequency (40.68 MHz) RF capacitively coupled discharge was used to modify tensile strain and chemical structure of unsized PAN-based carbon fiber under different RF powers, pure nitrogen gas pressures and exposure times. The plasma parameters were diagnosed by using single and double Impedans Langmuir probe techniques to understand physics of high frequency RF-CCP treatment processes. The power range was P = 50-200 Watt and the pressure range was p ≈ 0.1-0.8 Torr. The measured plasma pa...
The effects of carbon content on the properties of plasma deposited amorphous silicon carbide thin films
Sel, Kıvanç; Atılgan, İsmail; Department of Physics (2007)
The structure and the energy band gap of hydrogenated amorphous silicon carbide are theoretically revised. In the light of defect pool model, density of states distribution is investigated for various regions of mobility gap. The films are deposited by plasma enhanced chemical vapor deposition system with various gas concentrations at two different, lower (30 mW/cm2) and higher (90 mW/cm2), radio frequency power densities. The elemental composition of hydrogenated amorphous silicon carbide films and relativ...
Citation Formats
M. Parlak, “The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 313–319, 1999, Accessed: 00, 2020. [Online]. Available: