Atomic Ordering Processes in Magnetic Shape Memory (MSM) Ni50Mn50-xGax Full Heusler Alloys



BABAYEV, ZM; VALIYEV, EZ; MENSHIKOV, AZ; Mehrabov, Amdulla (1987-10-01)
Atomic and electronic properties of spherical silicon clusters
Erkoc, S; Katırcıoğlu, Şenay (1999-07-01)
We have investigated the atomic and electronic properties of spherical ideal Si-N clusters (N = 5-417) using the empirical many-body potential energy function consisting of two- and three-body interactions, and by empirical tight-binding calculations, respectively. It has been found that the average interaction energy per atom decreases as the cluster size increases, and it becomes almost constant after the size N greater than or equal to 275. On the other hand, the band gap shows cluster size dependent cha...
Atomic and electronic structure of group-IV adsorbates on the GaAs(001)-(1 x 2) surface
Usanmaz, D.; ÇAKMAK, MELEK; Ellialtıoğlu, Süleyman Şinasi (Elsevier BV, 2009-09-01)
Ab initio calculations, based on pseudopotentials and density functional theory, have been performed to investigate the atomic and electronic structure of the group-IV adsorbates (C, Si, Ge, Sn, and Pb) on the GaAs(001)-(1 x 2) surface considered in two different models: (i) non-segregated Ga-IV-capped structure and (ii) segregated structure in which the group-IV atoms occupying the second layer while the As atom floats to the surface. The non-segregated structure is energetically more favorable than the se...
Atomic ordering characteristics of Ni3Al intermetallics with substitutional ternary additions
Mehrabov, Amdulla; Akdeniz, Mahmut Vedat (1997-03-01)
The effects of substitutional ternary additions of Me = Zn, Ti, Si, Cr, Mn, Mo, W, Nb, Ta, V, Hf, or Zr on the energetical and structural characteristics of atomic short-range ordering (SRO) of Ni-3(Al(1-x)Me(x)) intermetallics with L1(2) type ordered structure have been analysed by combining the statistical theory of ordering with the electronic theory of alloys in pseudopotential approximation. The partial ordering energies and pairwise SRO parameters were calculated by taking into account the influence o...
Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors
Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Raşit; Kocabas, Coskun; Aydinli, Atilla (AIP Publishing, 2012-4)
Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al2O3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (lambda(cut-off) similar to 5.1 mu m). Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The ze...
Citation Formats
A. Mehrabov and M. V. Akdeniz, “Atomic Ordering Processes in Magnetic Shape Memory (MSM) Ni50Mn50-xGax Full Heusler Alloys,” 2009, Accessed: 00, 2021. [Online]. Available: