Electrical properties of ZnSe/Si nanowire and ZnSe/Si heterostructures

Date

2018-09-05

Author

Bozdoğan, Ecem
Coşkun, Emre
Özder, Serhat
Güllü, Hasan Hüseyin
Parlak, Mehmet

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URI

https://hdl.handle.net/11511/83377

Conference Name

Turkish Physical Society 34th International Physics Congress (TFD-34) (5 - 09 Eylül 2018)

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Unverified, Conference / Seminar

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Electrical characterization of CdZnTe/Si diode structure Balbasi, C. Dogru; Terlemezoğlu, Makbule; Gullu, H. H.; Yildiz, D. E.; Parlak, M. (Springer Science and Business Media LLC, 2020-07-01) Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. Obtained profiles enable us to understand the different characteristics of the diode structure such as the carrier conduction mechanism and the nature of the interfacial layer. Over the temperature range between 220 and 340 K, taking consideration of the disparity in the forward-biased curren...

Citation Formats

E. Bozdoğan, E. Coşkun, S. Özder, H. H. Güllü, and M. Parlak, “Electrical properties of ZnSe/Si nanowire and ZnSe/Si heterostructures,” presented at the Turkish Physical Society 34th International Physics Congress (TFD-34) (5 - 09 Eylül 2018), Muğla, Türkiye, 2018, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/83377.