Dielectric matrix influence on the photoluminescence properties of silicon nanocrystals

Date

2006-12-01

Author

Ferraioli, L.
Cazzanelli, M.
Daldosso, N.
Mulloni, V.
Bellutti, P.
Yerci, Selçuk
Turan, Raşit
Mikhaylov, A.n.
Tetelbaum, D.ı.
Pavesi, L.

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Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon.

Subject Keywords

Crystallography, Optics

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=67349147247&origin=inward
https://hdl.handle.net/11511/83380
https://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=13&SID=F4rrSYUd2LCckLRJcto&page=1&doc=1

Conference Name

3rd IEEE International Conference on Group IV Photonics (13 - 15 Eylül 2006)

Collections

Department of Physics, Conference / Seminar

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Citation Formats

L. Ferraioli et al., “Dielectric matrix influence on the photoluminescence properties of silicon nanocrystals,” presented at the 3rd IEEE International Conference on Group IV Photonics (13 - 15 Eylül 2006), Ottawa, Kanada, 2006, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=67349147247&origin=inward.