Device Measurements and Analysis of Ag Ga In Te Based Thin Film Heterojunction Diode Ö Bayraklı H H Güllü and M Parlak SolarTR 3 3rd Turkish Solar Electricity Conference and Exhibition 27 29 April 2015

Date

2015-04-29

Author

Bayraklı, Özge
Güllü, Hasan Hüseyin
Parlak, Mehmet

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https://hdl.handle.net/11511/85623

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Device Characterization of Zn Sn Se ZTSe Thin Films for Solar Cells T P2 69 Bayraklı, Özge; Güllü, Hasan Hüseyin; Coşkun, Emre; Parlak, Mehmet (2016-05-05)
Device Characterization of ZnInSe2 Thin Films T P2 28 Güllü, Hasan Hüseyin; Parlak, Mehmet (2016-05-05)
Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode Coskun, EMRE; Gullu, H. H.; CANDAN, İDRİS; Bayrakli, O.; Parlak, Mehmet; Ercelebi, C. (2015-06-01) In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 ...
Device Characterization of ZnInSe2 Thin Films Gullu, H. H.; Parlak, Mehmet (Elsevier BV; 2016-01-01) p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 mu m thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 (Omega.cm). Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In ...
Device Behavior Of CZTSe/Si Nanowire Heterojunction Sürücü, Gökhan; Bayraklı, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Parlak, Mehmet (null; 2017-10-28)

Citation Formats

Ö. Bayraklı, H. H. Güllü, and M. Parlak, “Device Measurements and Analysis of Ag Ga In Te Based Thin Film Heterojunction Diode Ö Bayraklı H H Güllü and M Parlak SolarTR 3 3rd Turkish Solar Electricity Conference and Exhibition 27 29 April 2015,” 2015, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/85623.