Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode

Coskun, EMRE
Gullu, H. H.
Bayrakli, O.
Parlak, Mehmet
Ercelebi, C.
In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 eV. The structural analysis was carried out by means of X-ray diffraction. Current-Voltage (I-V) measurements depending on the sample temperature were performed to investigate the device characteristics and the dominant conduction mechanism in an In/p-AGIT/n-Si/Ag structure. The series and shunt resistances were calculated by the help of parasitic resistance analysis as 5.73 and 1.57 x 10(4) Omega cm(2), respectively at room temperature. The ideality factors and barrier heights were evaluated as a function of sample temperature. In the low bias region, the thermionic emission together with the generation-recombination mechanism was investigated as the dominant transport mechanism; however, in the high bias region, space charge limited current was analyzed as the other effective mechanism in the carrier conduction. The built-in potential of the device was also determined by the help of capacitance-voltage measurements.


Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films
Gullu, H. H.; Parlak, Mehmet (2016-05-01)
In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...
Device Characterization of ZnInSe2 Thin Films
Gullu, H. H.; Parlak, Mehmet (Elsevier BV; 2016-01-01)
p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 mu m thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 ( Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In ...
Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
Bayrakli, O.; Terlemezoğlu, Makbule; GULLU, H. H.; Parlak, Mehmet (2017-06-30)
Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another annealing process was applied in nitrogen atmosphere at 450 degrees C to get poly-crystalline monophase CZTSe film structure. XRD analysis together with Raman spectroscopy was used to determine the structural properties. Spectral optical absorption coefficient evaluated from transmission da...
Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction
Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high...
Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films
Coskun, EMRE; Gullu, H. H.; Parlak, Mehmet; Ercelebi, C. (2015-02-01)
The structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dep...
Citation Formats
E. Coskun, H. H. Gullu, İ. CANDAN, O. Bayrakli, M. Parlak, and C. Ercelebi, “Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 138–145, 2015, Accessed: 00, 2020. [Online]. Available: