Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode

2015-06-01
Coskun, EMRE
Gullu, H. H.
CANDAN, İDRİS
Bayrakli, O.
Parlak, Mehmet
Ercelebi, C.
In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 eV. The structural analysis was carried out by means of X-ray diffraction. Current-Voltage (I-V) measurements depending on the sample temperature were performed to investigate the device characteristics and the dominant conduction mechanism in an In/p-AGIT/n-Si/Ag structure. The series and shunt resistances were calculated by the help of parasitic resistance analysis as 5.73 and 1.57 x 10(4) Omega cm(2), respectively at room temperature. The ideality factors and barrier heights were evaluated as a function of sample temperature. In the low bias region, the thermionic emission together with the generation-recombination mechanism was investigated as the dominant transport mechanism; however, in the high bias region, space charge limited current was analyzed as the other effective mechanism in the carrier conduction. The built-in potential of the device was also determined by the help of capacitance-voltage measurements.

Citation Formats
E. Coskun, H. H. Gullu, İ. CANDAN, O. Bayrakli, M. Parlak, and C. Ercelebi, “Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol. 34, pp. 138–145, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39986.