Device Characterization of ZnInSe2 Thin Films

Gullu, H. H.
Parlak, Mehmet
p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 mu m thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 ( Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In the studied temperature range, thermionic emission and space charge limited current were found to be predominant transport models for this hetero-junction. In addition, the parasitic resistance, ideality factor and barrier height were determined. The contribution of the p- and n-layer in the junction was studied under the spectral photo-response measurement. (C) 2016 The Authors. Published by Elsevier Ltd.


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In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 ...
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Citation Formats
H. H. Gullu and M. Parlak, “Device Characterization of ZnInSe2 Thin Films,” 2016, vol. 102, Accessed: 00, 2020. [Online]. Available: