Device Characterization of ZnInSe2 Thin Films

Gullu, H. H.
Parlak, Mehmet
p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 mu m thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 ( Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In the studied temperature range, thermionic emission and space charge limited current were found to be predominant transport models for this hetero-junction. In addition, the parasitic resistance, ideality factor and barrier height were determined. The contribution of the p- and n-layer in the junction was studied under the spectral photo-response measurement. (C) 2016 The Authors. Published by Elsevier Ltd.


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ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high...
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Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another annealing process was applied in nitrogen atmosphere at 450 degrees C to get poly-crystalline monophase CZTSe film structure. XRD analysis together with Raman spectroscopy was used to determine the structural properties. Spectral optical absorption coefficient evaluated from transmission da...
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Citation Formats
H. H. Gullu and M. Parlak, “Device Characterization of ZnInSe2 Thin Films,” 2016, vol. 102, Accessed: 00, 2020. [Online]. Available: