Device Characterization of ZnInSe2 Thin Films

2016-01-01
Gullu, H. H.
Parlak, Mehmet
p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 mu m thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 (Omega.cm). Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In the studied temperature range, thermionic emission and space charge limited current were found to be predominant transport models for this hetero-junction. In addition, the parasitic resistance, ideality factor and barrier height were determined. The contribution of the p- and n-layer in the junction was studied under the spectral photo-response measurement. (C) 2016 The Authors. Published by Elsevier Ltd.

Suggestions

Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode
Coskun, EMRE; Gullu, H. H.; CANDAN, İDRİS; Bayrakli, O.; Parlak, Mehmet; Ercelebi, C. (2015-06-01)
In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 ...
Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction
Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high...
Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
Bayrakli, O.; Terlemezoğlu, Makbule; GULLU, H. H.; Parlak, Mehmet (2017-06-30)
Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another annealing process was applied in nitrogen atmosphere at 450 degrees C to get poly-crystalline monophase CZTSe film structure. XRD analysis together with Raman spectroscopy was used to determine the structural properties. Spectral optical absorption coefficient evaluated from transmission da...
Acoustic phonons scattering mobility and carrier effective mass in In6S7 crystals
Qasrawi, A. F.; Hasanlı, Nızamı (Elsevier BV, 2006-12-21)
Systematic dark electrical resistivity and Hall coefficient measurements have been carried out in the temperature range of 170-320 K on n-type In6S7 crystals. The analysis of the electrical resistivity and carrier concentration reveals the intrinsic type of conduction with an average energy band gap of similar to 0.75 eV The carrier effective masses of the conduction and valence bands were calculated from the intrinsic temperature-dependent carrier concentration data and were found to be 0.565m(0) and 2.020...
Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 <= x <= 1) by spectroscopic ellipsometry, transmission, and reflection
IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2014-01-01)
The layered semiconducting TlGaxIn1-xSe2-mixed crystals (0.5 <= x <= 1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectri...
Citation Formats
H. H. Gullu and M. Parlak, “Device Characterization of ZnInSe2 Thin Films,” 2016, vol. 102, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35107.