Advanced approach for oxygen transport and crystallization front calculation in Cz silicon crystal growth

Date

2022-04-01

Author

Borisov, D.
Artemyev, V.
Kalaev, V.
Smirnov, A.
Kuliev, A.
Zobel, F.
Kunert, R.
Turan, Raşit
Aydin, O.
Kabacelik, I.

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© 2021 Elsevier B.V.Modeling of oxygen transport during Czochralski (Cz) silicon crystal growth still is a big challenge due to oxygen evacuation from the melt free surface, affected by strong anisotropy of turbulent mass transport. To predict the crystal oxygen concentration and crystallization front geometry with reasonable accuracy usually a 3D unsteady LES or DNS approach is required which demands significant computation resources and time. We present a new steady turbulence model using the extended hypothesis for modeling the Reynolds stress tensor, which accounts for different mechanisms of Reynolds stresses anisotropy and can be used in fast 2D engineering calculations. Several 8″ silicon crystals were grown in EKZ 3500 furnace with varying operating parameters. Wafers have been cut from different parts of the crystals and analyzed using the Fourier-transform infrared spectroscopy (FTIR) for oxygen concentration in facilities of Fraunhofer CSP and iTechSolar. The comparison between experimental and calculated results, which include oxygen concentration and interface deflection, is discussed in details. Time-averaged Reynolds stress tensor components as well as the turbulent heat fluxes components are compared between unsteady LES and steady RANS approaches.

Subject Keywords

A1. GGDH, A1. LES, A1. Oxygen concentration, A1. RANS, A1. Reynolds stress tensor, A2. Czochralski silicon crystal growth process optimization

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85124071589&origin=inward
https://hdl.handle.net/11511/97650

Journal

Journal of Crystal Growth

DOI

https://doi.org/10.1016/j.jcrysgro.2021.126493

Collections

Department of Physics, Article

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Citation Formats

D. Borisov et al., “Advanced approach for oxygen transport and crystallization front calculation in Cz silicon crystal growth,” Journal of Crystal Growth, vol. 583, pp. 0–0, 2022, Accessed: 00, 2022. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85124071589&origin=inward.