Structural and optical properties of (TlInS2)0.75(TlInSe2)0.25 thin films deposited by thermal evaporation

Date

2023-01-01

Author

Guler, I.
Isik, M.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

68
views

0
downloads

Layered semiconductor materials have become a serious research topic in recent years, thanks to their effective optical properties. In this article, the thin-film structure of Tl2In2S3Se [(TlInS2)0.75(TlInSe2)0.25] material with layered structure was grown by thermal evaporation method. The structural, morphological, and optical properties of the deposited thin films were examined. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques were used to get information about structural and morphological properties of the thin films. XRD pattern presented well-defined peaks associated with monoclinic crystalline structure. The crystallite size, dislocation density, and lattice strain of the films were also obtained from the analyses of XRD pattern. EDS analysis showed that atomic compositional ratios of the Tl, In, S, and Se elements are consistent with chemical formula of Tl2In2S3Se. The optical characterization of thin film was performed using transmission and Raman spectroscopy techniques. Raman spectrum offered information about the vibrational modes of the thin film. The analyses of the transmission spectrum presented the indirect and direct band gap energies of the Tl2In2S3Se thin film as 2.23 and 2.52 eV, respectively. The further analyses on the absorption coefficient resulted in Urbach energy of 0.58 eV.

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85146609832&origin=inward
https://hdl.handle.net/11511/102201

Journal

Journal of Materials Science: Materials in Electronics

DOI

https://doi.org/10.1007/s10854-022-09597-5

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Structural Vibration Analysis of Single Walled Carbon Nanotubes with Atom Vacancies Dogan, Ibrahim Onur; Yazıcıoğlu, Yiğit (2014-11-01) Recent investigations in nanotechnology show that carbon nanotubes have significant mechanical, electrical and optical properties. Interactions between those are also promising in both research and industrial fields. Those unique characteristics are mainly due to the atomistic structure of carbon nanotubes. In this paper, the structural effects of vacant atoms on single walled carbon nanotubes are investigated using matrix stiffness method. In order to use this technique, a linkage between structural mechan...
Structural and optical characteristics of thermally evaporated TlGaSe2 thin films Isik, M.; KARATAY, AHMET; Hasanlı, Nızamı (2022-02-01) The present paper reports the structural and optical properties of thermally evaporated TlGaSe2 thin films. X-ray diffraction pattern of evaporated film presented two diffraction peaks around 24.15 and 36.00° which are associated with planes of monoclinic unit cell. Surface morphology of the TlGaSe2 thin films was investigated by scanning electron and atomic force microscopy techniques. Although there was observed some ignorable amount of clusters of quasi-spherical shape in the scanning electron microscope...
Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique KARAAĞAÇ, HAKAN; Parlak, Mehmet; KARABULUT, ORHAN; SERİNCAN, UĞUR; Turan, Raşit; Akinoglu, B. G. (Wiley, 2006-12-01) Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
Structural, optical and electrical characterization of CDSEXTE1-X thin films Demir, Merve; Parlak, Mehmet; Department of Physics (2020) The aim of this study is to investigate the structural, optical and electrical properties of ternary CdSexTe1-x thin films. CdTe and CdSe thin films are being used in solar cells due to their favorable direct band gaps of 1.5eV and 1.7eV, respectively. Moreover, having high absorption coefficients provide an important role to CdTe and CdSe films as an absorber layer. Therefore, by mixing these two films, properties of resultant ternary CdSexTe1-x alloy can be optimized for solar cell applications. Chemical ...
Structural vibration analysis of single walled carbon nanotubes with atom-vacancies Doğan, İbrahim Onur; Yazıcıoğlu, Yiğit; Department of Mechanical Engineering (2010) Recent investigations in nanotechnology show that carbon nanotubes (CNT) have one of the most significant mechanical, electrical and optical properties. Interactions between those areas like electrical, optical and mechanical properties are also very promising in both research and industrial fields. Those unique characteristics are built by mainly the atomistic structure of the carbon nanotubes. In this thesis, the effects of vacant atoms on single walled carbon nanotubes (SWCNT) are investigated using matr...

Citation Formats

I. Guler, M. Isik, and N. Hasanlı, “Structural and optical properties of (TlInS2)0.75(TlInSe2)0.25 thin films deposited by thermal evaporation,” Journal of Materials Science: Materials in Electronics, vol. 34, no. 3, pp. 0–0, 2023, Accessed: 00, 2023. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85146609832&origin=inward.