Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-xas Quantum Well Infrared Photodetectors

Date

2022-08-01

Author

Beşikci, Cengiz
Balci, S.V.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

124
views

0
downloads

We report diffraction-grating-free mid-wavelength infrared quantum well infrared photodetector pixels with small pitches (down to an area of 49 μm2) which exhibited remarkable peak conversion efficiency (70%) together with f/2 peak specific detectivity of ∼ 1.5×1011 cmHz1/2/W at 78 K. The sensors were fabricated with In0.85Ga0.15As quantum wells sandwiched between InP barriers. The pixels with 22% peak quantum efficiency exhibited background limited characteristics at 90 K with f/2 aperture and ∼ 6μm cut-off wavelength. All of the characteristics of the grating-free pixels scaled perfectly with the sensor area without suffering from the problems related with pitch reduction in the alternative technologies. The results demonstrate the potential of this sensor technology as a viable alternative to InSb, HgCdTe and Type-II superlattice sensor technologies for very small-pitch focal plane arrays.

Subject Keywords

Quantum well infrared photodetector, infrared imaging, thermal imaging, PHOTOCONDUCTIVE GAIN, DETECTORS, HGCDTE, STRAIN, infrared imaging, Quantum well infrared photodetector, thermal imaging

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85133794694&origin=inward
https://hdl.handle.net/11511/102342

Journal

IEEE Electron Device Letters

DOI

https://doi.org/10.1109/led.2022.3185535

Collections

Department of Electrical and Electronics Engineering, Article

Suggestions

OpenMETU
Core

A detailed ensemble Monte Carlo study of the effect of quantum well width on quantum well infrared photodetector characteristics Memiş, S.; Cellek, O.o.; Bostanci, U.; Tomak, Mehmet; Beşikci, Cengiz (2006-10-10) We present a simulation based investigation of the dependence of the device characteristics on the quantum well width in AlGaAs/GaAs quantum well infrared photodetectors (QWIPs) through the ensemble Monte Carlo technique. The simulations on two different standard Al0.3Ga0.7As/GaAs QWIPs with quantum well widths of 36 and 44 Å have shown that the gain in the former is considerably higher, which is due to much longer lifetime of the photoexcited electrons as a result of lower capture probability in the device...
High performance focal plane array technologies from short to long wavelength infrared bands Arslan, Yetkin; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2014) This thesis work covers the development of three different state of the art infrared sensor technologies: quantum well infrared photodetectors (QWIPs), HgCdTe sensors and extended InGaAs photodetectors. QWIP is the leading member of the quantum structure infrared photodetector family providing excellent uniformity and stability with field proven performance. The utilization of the InP/In0.48Ga0.52As multi-quantum well structure (instead of the standard AlGaAs/GaAs material system) for the implementation of ...
Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array Arslan, Yetkin; Colakoglu, Tahir; Beşikci, Cengiz (2013-02-01) Quantum well infrared photodetector (QWIP) is still the sole field proven low-cost long-wavelength infrared photon sensor. We report an impressively high quantum efficiency of 31% in the pixels of a large format (640 x 512) grating-coupled InP/In0.48Ga0.52As QWIP focal plane array (FPA). The InP/InGaAs QWIP FPA with a cut-off wavelength of similar to 9 mu m provided desirable characteristics at a temperature as high as 78 K. The noise-equivalent temperature difference of the FPA with f/2 optics is similar t...
Numerical modeling and optimization of HgCdTe infrared photodetectors for thermal imaging Koçer, Hasan; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2011) This thesis presents a detailed investigation of the performance limiting factors of long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) p on n HgCdTe detectors through numerical simulations at 77 K incorporating all considerable generation-recombination mechanisms including trap assisted tunneling (TAT), Shockley-Read-Hall (SRH), Auger and radiative processes. Numerical simulations under dark and illuminated conditions were performed with different absorber layer thicknesses, material...
Radiometry-based range prediction for mid-and long-wave infrared imaging systems Turgut, Berk Berkan; Bek, Alpan; Kocaman, Serdar; Department of Micro and Nanotechnology (2018) The present study is about the mid- and long-wave infrared imaging systems in which radiometry-based range prediction are performed. In this study, radiometry-based de- tection, recognition and identification range prediction equation is derived by using an optical design, optomechanical and optoelectronic structure for particular targets, atmospheric conditions, and backgrounds. Analysis of the atmospheric transmittance value for four different atmospheric conditions at mid- and long-wave is performed in d...

Citation Formats

C. Beşikci and S. V. Balci, “Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-xas Quantum Well Infrared Photodetectors,” IEEE Electron Device Letters, vol. 43, no. 8, pp. 1287–1290, 2022, Accessed: 00, 2023. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85133794694&origin=inward.