Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array

Date

2013-02-01

Author

Arslan, Yetkin
Colakoglu, Tahir
Beşikci, Cengiz

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Quantum well infrared photodetector (QWIP) is still the sole field proven low-cost long-wavelength infrared photon sensor. We report an impressively high quantum efficiency of 31% in the pixels of a large format (640 x 512) grating-coupled InP/In0.48Ga0.52As QWIP focal plane array (FPA). The InP/InGaAs QWIP FPA with a cut-off wavelength of similar to 9 mu m provided desirable characteristics at a temperature as high as 78 K. The noise-equivalent temperature difference of the FPA with f/2 optics is similar to 30 mK with an integration time as low as 1 ms at 67 K. We also present a thorough comparison of InP and GaAs-based QWIPs for long-wavelength infrared thermal imaging and shed light on the characteristic differences between these devices to be used as a guide for improving the performance of this important sensor technology. The results clearly indicate that the main limitations of the standard QWIP technology can be overcome through the utilization of alternative material systems and proper FPA processing techniques.

Subject Keywords

Focal plane array, Infrared detector

URI

https://hdl.handle.net/11511/35017

Journal

IEEE JOURNAL OF QUANTUM ELECTRONICS

DOI

https://doi.org/10.1109/jqe.2012.2237160

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

Y. Arslan, T. Colakoglu, and C. Beşikci, “Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array,” IEEE JOURNAL OF QUANTUM ELECTRONICS, pp. 186–195, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35017.