Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array

Date

2013-02-01

Author

Arslan, Yetkin
Colakoglu, Tahir
Beşikci, Cengiz

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

213
views

0
downloads

Quantum well infrared photodetector (QWIP) is still the sole field proven low-cost long-wavelength infrared photon sensor. We report an impressively high quantum efficiency of 31% in the pixels of a large format (640 x 512) grating-coupled InP/In0.48Ga0.52As QWIP focal plane array (FPA). The InP/InGaAs QWIP FPA with a cut-off wavelength of similar to 9 mu m provided desirable characteristics at a temperature as high as 78 K. The noise-equivalent temperature difference of the FPA with f/2 optics is similar to 30 mK with an integration time as low as 1 ms at 67 K. We also present a thorough comparison of InP and GaAs-based QWIPs for long-wavelength infrared thermal imaging and shed light on the characteristic differences between these devices to be used as a guide for improving the performance of this important sensor technology. The results clearly indicate that the main limitations of the standard QWIP technology can be overcome through the utilization of alternative material systems and proper FPA processing techniques.

Subject Keywords

Focal plane array, Infrared detector

URI

https://hdl.handle.net/11511/35017

Journal

IEEE JOURNAL OF QUANTUM ELECTRONICS

DOI

https://doi.org/10.1109/jqe.2012.2237160

Collections

Department of Electrical and Electronics Engineering, Article

Suggestions

OpenMETU
Core

Investigation of warpage behavior of single crystal silicon on a silicon Adhesive ceramic integrated structure at cryogenic temperatures Baloğlu, Can; Okutucu Özyurt, Hanife Tuba; Dursunkaya, Zafer (2016-03-17) Understanding thermal stress and warpage behavior of heterogeneous component assemblies is vital in infrared sensor applications of silicon semiconductor material. The silicon semiconductor warpage behavior of the integrated structure composed of silicon material itself, an adhesive layer and a ceramic layer is analyzed by both FEM and experimental studies. The studies are performed between room temperature and 80 K. Thickness of each layer has an effect on the warpage. The silicon warpage of the initial ba...
High performance focal plane array technologies from short to long wavelength infrared bands Arslan, Yetkin; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2014) This thesis work covers the development of three different state of the art infrared sensor technologies: quantum well infrared photodetectors (QWIPs), HgCdTe sensors and extended InGaAs photodetectors. QWIP is the leading member of the quantum structure infrared photodetector family providing excellent uniformity and stability with field proven performance. The utilization of the InP/In0.48Ga0.52As multi-quantum well structure (instead of the standard AlGaAs/GaAs material system) for the implementation of ...
Ensemble Monte Carlo simulation of quantum well infrared photodetectors Memiş, Sema; Tomak, Mehmet; Department of Physics (2006) Quantum well infrared photodetectors (QWIPs) have recently emerged as a potential alternative to the conventional detectors utilizing low bandgap semiconductors for infrared applications. There has been a considerable amount of experimental and theoretical work towards a better understanding of QWIP operation, whereas there is a lack of knowledge on the underlying physics. This work provides a better understanding of QWIP operation and underlying physics through particle simulations using the ensemble Monte...
Metamaterial based wideband infrared absorbers Üstün, Kadir; Sayan, Gönül; Department of Electrical and Electronics Engineering (2017) In this thesis, design and simulation of wideband metamaterial absorbers are investigated in the long wave infrared (LWIR) and the mid-wave infrared (MWIR) bands of the electromagnetic spectrum. Use of LWIR and MWIR bands in absorber design is especially important for critical applications including the design of thermal cameras and thermal emitters. Integration of metamaterial topologies into the absorber structures provides flexibilities in design to enhance the operation efficiency of these devices by in...
Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-xas Quantum Well Infrared Photodetectors Beşikci, Cengiz; Balci, S.V. (2022-08-01) We report diffraction-grating-free mid-wavelength infrared quantum well infrared photodetector pixels with small pitches (down to an area of 49 μm2) which exhibited remarkable peak conversion efficiency (70%) together with f/2 peak specific detectivity of ∼ 1.5×1011 cmHz1/2/W at 78 K. The sensors were fabricated with In0.85Ga0.15As quantum wells sandwiched between InP barriers. The pixels with 22% peak quantum efficiency exhibited background limited characteristics at 90 K with f/2 aperture and ∼ 6μm cut-of...

Citation Formats

Y. Arslan, T. Colakoglu, and C. Beşikci, “Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array,” IEEE JOURNAL OF QUANTUM ELECTRONICS, pp. 186–195, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35017.