Production and electrical characterization of metal and polysilicon gata MOS structures.

Mutlugil, Bülent


Investigation of SiO /p-Si structure by DLTS and various admittance techniques
Özder, Serhat; Katırcıoğlu, Bayram; Department of Physics (1994)
Experimental research on in-tube condensation under steady-state and transient conditions
Tanrikut, A; Yesin, O (2005-01-01)
In this research study, in-tube condensation in the presence of air was investigated experimentally at a heat exchanger of countercurrent type for different operating conditions. The test matrix for the steady-state condition covers the range of pressures P = 1.8 to 5.5 bars, vapor Reynolds numbers Re, = 45 000 to 94 000, and inlet air mass fraction values Xi = 0 to 52%. The effect of air manifests itself by a reduction in the local heat flux and the local heat transfer coefficient. The local heat transfer ...
Instability studies in amorphous silicon based alloys
Özdemir, Orhan; Katırcıoğlu, Bayram; Department of Physics (2004)
The pixel element which is an integrated combination of a p-i-n diode with a thin film transistor (TFT) is used to produce image sensor arrays in scanning and displays technologies, necessitating the deposition of hydrogenated silicon based semiconducting and insulating thin films such as a-Si:H, a-SiNx:H over large area. The widely used techniques to achieve this goal is the plasma enhanced chemical vapor deposition (PECVD) due to its large area and low temperature (? 300 ?C) abilities. In particular, PECV...
Performance of solar cells fabricated on black multicrystalline Si by nanowire decoration
Es, Fırat; Çiftpınar, Emine Hande; Demircioğlu, Olgu; Günöven, Mete; Kulakci, Mustafa; Turan, Raşit (2015-03-30)
Vertically aligned Si nanowire (NW) arrays fabricated by metal-assisted etching technique were applied to industrial sized (156 mm x 156 mm) multicrystalline Si cells as an anti-reflective (AR) medium. The NW lengths (between 0.15 and 2.2 mu m) were controlled by etch duration from 5 to 50 min. A completely black surface could be observed, demonstrating excellent AR properties in the entire range of the solar spectrum, even without additional anti-reflective coating layer (e.g., SiNx:H). Standard Si solar c...
Fabrication and doping of thin crystalline Si films prepared by e-beam evaporation on glass substrate
Sedani, Salar Habibpur; Turan, Raşit; Ünalan, Hüsnü Emrah; Department of Micro and Nanotechnology (2013)
In this thesis study, fabrication and doping of silicon thin films prepared by electron beam evaporation equipped with effusion cells for solar cell applications have been investigated. Thin film amorphous Si (a-Si) layers have been fabricated by the electron beam evaporator and simultaneously doped with boron (B) and phosphorous (P) using effusion cells. Samples were prepared on glass substrates for the future solar cell operations. Following the deposition of a-Si thin film, crystallization of the films h...
Citation Formats
B. Mutlugil, “Production and electrical characterization of metal and polysilicon gata MOS structures.,” Ph.D. - Doctoral Program, Middle East Technical University, 1992.