Instability studies in amorphous silicon based alloys

Download

index.pdf

Date

2004

Author

Özdemir, Orhan

Metadata

Show full item record

Item Usage Stats

172
views

107
downloads

The pixel element which is an integrated combination of a p-i-n diode with a thin film transistor (TFT) is used to produce image sensor arrays in scanning and displays technologies, necessitating the deposition of hydrogenated silicon based semiconducting and insulating thin films such as a-Si:H, a-SiNx:H over large area. The widely used techniques to achieve this goal is the plasma enhanced chemical vapor deposition (PECVD) due to its large area and low temperature (? 300 ?C) abilities. In particular, PECVD has proved to be able to deposit both high quality insulator (a-SiNx:H) and active layer of p-i-n diode (intrinsic hydrogenated amorphous silicon carbide, a-SiCx:H) and by sequential deposition, it is possible to minimize the interface related problems, which play an important role in metal insulator semiconductor (MIS) and TFT structures. PECVD deposited a-SiCx:H films over p-type crystal Si and metal substrates (MIS and MIM) were investigated by both admittance spectroscopy (Capacitance or conductance vs. voltage, temperature or frequency measurements) and Deep Level Transient spectroscopy (DLTS) to investigate the interface related problems. In this respect, instability phenomena (due to the creation of metastable states and charge injection into the gate electrode) were studied via the c-Si/a-SiCx:H (and/or a-SiNx:H) heterojunction. Specially, capacitance voltage kinetics were worked out and then the enrolled trap energies were identified with temperature mode DLTS. The expertise gathered as a result of these studies were used in the fabrication and characterization of TFT2s. In this respect, inverted gate staggered type Thin Film Transistor produced and characterized for the first time after Combo-251 Pattern Generator was implemented.

Subject Keywords

Amorphous semiconductors., Silicon.

URI

http://etd.lib.metu.edu.tr/upload/3/12604719/index.pdf
https://hdl.handle.net/11511/14039

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Performance of solar cells fabricated on black multicrystalline Si by nanowire decoration Es, Fırat; Çiftpınar, Emine Hande; Demircioğlu, Olgu; Günöven, Mete; Kulakci, Mustafa; Turan, Raşit (2015-03-30) Vertically aligned Si nanowire (NW) arrays fabricated by metal-assisted etching technique were applied to industrial sized (156 mm x 156 mm) multicrystalline Si cells as an anti-reflective (AR) medium. The NW lengths (between 0.15 and 2.2 mu m) were controlled by etch duration from 5 to 50 min. A completely black surface could be observed, demonstrating excellent AR properties in the entire range of the solar spectrum, even without additional anti-reflective coating layer (e.g., SiNx:H). Standard Si solar c...
The sub-terahertz region absorption of sputter deposited nanoscale TiAlV thin films Öksüzoğlu, Ramis Mustafa; Altan, Hakan; Abdüsselamoğlu, Mehmet Sait; Özkan, Özlem Başak; Bayram, Yasin; Chakar, Erkan Syuleyman (2023-01-01) Absorption in the sub-terahertz region in TiAlV thin films with their potential usage in detectors and plasmonic applications is a crucial point for device performance. This work aims to investigate the thickness-dependent evolution of the sub-terahertz region absorption, electrical resistivity in TiAlV thin films deposited by DC magnetron sputtering and to study the structure-property correlation. For structural analyses, X-ray diffraction and transmission electron microscopy techniques have been used. In ...
Femtosecond laser written waveguides deep inside silicon Pavlov, Ihor; Pavlova, S.; Kadan, V.; Makey, G.; Turnali, A.; Yavuz, O.; Ilday, F. O. (2017-08-01) Photonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 mu m. To this end, we use 350 fs long, 2 mu J pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The pos...
Dynamical electrical tuning of a silicon microsphere: used for spectral mapping of the optical resonances Yüce, Emre; Thursby, Graham J.; Serpenguzel, Ali (2014-09-20) In this work, electrical square pulses at various duty cycles are applied to a silicon microsphere resonator in order to continuously tune the refractive index of a silicon microsphere and to map the optical resonance in the time domain. A continuous-wave semiconductor diode laser operating in the L-band is used for the excitation of the silicon microsphere optical resonances. The 90 degrees transverse magnetically polarized elastic scattering signal is used to monitor the silicon microsphere resonances. We...
A CMOS COMPATIBLE METAL-POLYMER MICROCHANNEL HEAT SINK FOR MONOLITHIC CHIP COOLING APPLICATIONS Koyuncuoglu, Aziz; Okutucu Özyurt, Hanife Tuba; Külah, Haluk (2010-08-13) A novel complementary metal oxide semiconductor (CMOS) compatible microchannel heat sink is designed and fabricated for monolithic liquid cooling of electronic circuits. The microchannels are fabricated with full metal walls between adjacent channels with a polymer top layer for easy sealing and optical visibility of the channels. The use of polymer also provides flexibility in adjusting the width of the channels allowing better management of the pressure drop. The proposed microchannel heat sink requires n...

Citation Formats

O. Özdemir, “Instability studies in amorphous silicon based alloys,” Ph.D. - Doctoral Program, Middle East Technical University, 2004.