Electrical characterization of GaInP/InGaAs/GaAs modulation doped field-effect transistor structures

Download
1998
Civan, Yavuz

Suggestions

Electrical characterization of CdZnTe/Si diode structure
Balbasi, C. Dogru; Terlemezoğlu, Makbule; Gullu, H. H.; Yildiz, D. E.; Parlak, M. (Springer Science and Business Media LLC, 2020-07-01)
Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. Obtained profiles enable us to understand the different characteristics of the diode structure such as the carrier conduction mechanism and the nature of the interfacial layer. Over the temperature range between 220 and 340 K, taking consideration of the disparity in the forward-biased curren...
Electrical characterization of sol-gel derived PZT films produced by micropatterning
Yücel, Tuna; Özenbaş, Macit; Department of Metallurgical and Materials Engineering (2003)
Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices
Bayhan, H; Ercelebi, C (IOP Publishing, 1997-05-01)
The effects of post-deposition processes such as CdCl2 dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated. The CdCl2 dip followed by air annealing at 300 degrees C for 5 min improved the device efficiency significantly, resulting in decreased CdTe resistivity and enhanced grain size. The temperature-dependent current-voltage analysis indicated that above 280 K interface recombination dominates the current tr...
Electrical Characterization of Cu0 5Ag0 5InSe2 thin films
Güllü, Hasan Hüseyin; Bayraklı, Özge; Parlak, Mehmet (null; 2016-10-02)
Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction
Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high...
Citation Formats
Y. Civan, “Electrical characterization of GaInP/InGaAs/GaAs modulation doped field-effect transistor structures,” Middle East Technical University, 1998.