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Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction
Date
2019-05-01
Author
Gullu, H. H.
Parlak, Mehmet
Metadata
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ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high forward-bias region, the series and shunt resistances were calculated with the help of parasitic resistance relations, yielding room-temperature values of 9.54 x 10(2) Omega cm(2) and 1.23 x 10(3) Omega cm(2), respectively. According to the analysis of the current flow in the forward-bias region, abnormal thermionic emission due to the variation of the ideality factor with temperature and space-charge-limited current processes were determined to be the dominant conduction mechanisms in this heterostructure. In the reverse-bias region, the tunneling mechanism was found to be effective in the leakage current flow with trap density of 10(6) cm(-3). Spectral photocurrent measurements were carried out to investigate the spectral working range of the device structure. The main photocurrent peaks observed in the spectrum corresponded to the band-edge values of the active thin-film layers.
Subject Keywords
Electrical and Electronic Engineering
,
Materials Chemistry
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
,
Thin film
,
Heterostructure
,
Transport mechanism
URI
https://hdl.handle.net/11511/41250
Journal
JOURNAL OF ELECTRONIC MATERIALS
DOI
https://doi.org/10.1007/s11664-019-07070-4
Collections
Department of Physics, Article
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H. H. Gullu and M. Parlak, “Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction,”
JOURNAL OF ELECTRONIC MATERIALS
, pp. 3096–3104, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41250.