Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices

Bayhan, H
Ercelebi, C
The effects of post-deposition processes such as CdCl2 dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated. The CdCl2 dip followed by air annealing at 300 degrees C for 5 min improved the device efficiency significantly, resulting in decreased CdTe resistivity and enhanced grain size. The temperature-dependent current-voltage analysis indicated that above 280 K interface recombination dominates the current transport mechanism for the as-grown samples, while depletion region recombination starts to be dominant after annealing the samples with CdCl2. Below 280 K multistep tunnelling is identified to be the dominant transport mechanism. Frequency-dependent capacitance-voltage studies revealed that after annealing with CdCl2 the density of interface states decreases and the quality of the heterointerface improves. The capacitance of the CdS/CdTe heterojunctions has been analysed using a model based on the existence of a single dominant trap level, identified at 0.40 eV above the valence band with a concentration of 5.1 x 10(15) Cm-3.


Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates
Ahiboz, Doguscan; Nasser, Hisham; Aygun, Ezgi; Bek, Alpan; Turan, Raşit (IOP Publishing, 2018-04-01)
Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2-x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2-x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, p...
Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer
GÖKÇEN, MUHARREM; ALTINDAL, ŞEMSETTİN; Karaman, M.; Aydemir, U. (Elsevier BV, 2011-11-01)
The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(...
Photoelectronic and electrical properties of InS crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01)
To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Stability analysis of graphene nanoribbons by molecular dynamics simulations
Dugan, N.; Erkoç, Şakir (Wiley, 2008-04-01)
In this work, stability of graphene nanoribbons are investigated using molecular dynamics. Simulations include heating armchair and zigzag-edged nanoribbons of widths varying between one and nine hexagonal rings until the bonds between carbon atoms start to break. Breaking temperatures and binding energies per atom for different widths are presented for both armchair and zigzag-edged cases. A nontrivial relation between stability and width is observed and discussed.
Photoelectronic, optical and electrical properties of TlInS2 single crystals
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2003-09-01)
To specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the d...
Citation Formats
H. Bayhan and C. Ercelebi, “Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 600–608, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/64929.