Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices

Date

1997-05-01

Author

Bayhan, H
Ercelebi, C

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The effects of post-deposition processes such as CdCl2 dip and/or annealing in air on the material and device properties of vacuum-evaporated Au-CdTe/CdS-TO heterojunction solar cells have been investigated. The CdCl2 dip followed by air annealing at 300 degrees C for 5 min improved the device efficiency significantly, resulting in decreased CdTe resistivity and enhanced grain size. The temperature-dependent current-voltage analysis indicated that above 280 K interface recombination dominates the current transport mechanism for the as-grown samples, while depletion region recombination starts to be dominant after annealing the samples with CdCl2. Below 280 K multistep tunnelling is identified to be the dominant transport mechanism. Frequency-dependent capacitance-voltage studies revealed that after annealing with CdCl2 the density of interface states decreases and the quality of the heterointerface improves. The capacitance of the CdS/CdTe heterojunctions has been analysed using a model based on the existence of a single dominant trap level, identified at 0.40 eV above the valence band with a concentration of 5.1 x 10(15) Cm-3.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/64929

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/12/5/014

Collections

Department of Physics, Article

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Citation Formats

H. Bayhan and C. Ercelebi, “Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 600–608, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/64929.