Preparation of pnzt thin films by solution deposition and their characterization

Kayasü, Volkan
The aim of this study is to produce Nb doped PZT thin films and then investigate the effects of Nb+5 ion on the structural, dielectric and ferroelectric properties. Niobium (Nb) doped lead zirconate titanate thin films (PNZT) were produced by solution deposition with nominal compositions, Pb(1-0.5x)(Zr0.53Ti0.47)1-xNbxO3 where x = 0.00 - 0.07. Single and multi-layered films were deposited onto (111)-Pt/Ti/SiO2/Si-(100) substrates by spin coating. PZT compositions near the morphotropic phase boundary (MPB) was chosen because excellent ferroelectric and dielectric properties were achieved in this area. The effects of sintering temperature, sintering time, variation of thickness in the films and change of niobium content were investigated with regard to phase development, microstructure, and ferroelectric and dielectric characteristics. The best results were obtained in double layered films (390 nm) which were sintered at 600 °C for 1 h. Grain size of the films decreases with increasing Nb content except for 1 at % Nb doped films. The average grain size of 1 at % Nb doped thin films was calculated as 130 nm by using FESEM. Optimum doping level was found in 1 at % Nb doped films. For 1 at % Nb doped [Pb0.995(Zr0.53Ti0.47)0.99Nb0.01O3] films, remnant polarization (Pr) of 35.75 μC/cm2 and coercive field (Ec) of 75.65 kV/cm have been obtained. The maximum dielectric constant was achieved in 1 at % Nb doped films which was 689. Tangent loss values were found between 2-4 % and these values were independent of Nb concentrations. Ferroelectric and dielectric properties were decreased at higher Nb doping levels because of the changes in the grain size, distortion of the crystal structure and pinning of the domains.


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Citation Formats
V. Kayasü, “Preparation of pnzt thin films by solution deposition and their characterization,” M.S. - Master of Science, Middle East Technical University, 2008.