Growth and characterization of Culn1-x GaxSe2 (CIGS) thin films for solar cell structures

Candan, İdris
Direct conversion of solar energy, which is the most powerful and unlimited one among the renewable energy sources; into the electrical energy by the photovoltaic devices, is a promising way of meeting the energy needs of future. Thin film semiconductor materials show great promise for the production of efficient, low-cost solar cell devices. Recently advanced research on thin film photovoltaics in all aspects, has attracted intense attention. Thin film semiconductors for the photovoltaic applications are deposited in large areas by different methods. In this study, deposition and characterization of CuIn1-x GaxSe2 ( CIGS ) semiconductor thin films by thermal evaporation and e-beam evaporation methods were investigated. Material properties and deposition parameters of the thin films are aimed to be optimized for solar cell applications. Structural properties of the deposited CIGS thin films were examined through X-ray diffraction and Energy Dispersive X-ray Analysis. The temperature dependent electrical conductivity, Hall effect and photoconductivity of these samples have been measured between 100 and 400 K. For the optical characterization of CIGS thin films, the transmission measurements have been carried out in the wavelength region of 325-900 nm. The changes in the structural, electrical and optical properties of samples through post-depositional annealing effect were also analyzed.


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Citation Formats
İ. Candan, “Growth and characterization of Culn1-x GaxSe2 (CIGS) thin films for solar cell structures,” M.S. - Master of Science, Middle East Technical University, 2009.