Hopping conduction in Ga4Se3S layered single crystals

Date

2008-11

Author

Qasrawi, A.F.
Hasanlı, Nızamı

Metadata

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The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were found to be 7.20 x 10(15) cm(-3) eV(-1) and 7.56 x 10(-6) cm, respectively. When the sample was illuminated, the Mott's VRH parameters are altered, particularly, the average hopping distance and the density of states near the Fermi level increase when light intensity increases. This action is attributed to the electron generation by photon absorption, which in turn leads to the Fermi level shift and/or trap density reduction by electron-hole recombination.

Subject Keywords

Semiconductors, Crystal growth, Electronic transport

URI

https://hdl.handle.net/11511/28268

Journal

Solid State Communications

DOI

https://doi.org/10.1016/j.ssc.2008.08.021

Collections

Department of Physics, Article

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Citation Formats

A. F. Qasrawi and N. Hasanlı, “Hopping conduction in Ga4Se3S layered single crystals,” Solid State Communications, pp. 190–193, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28268.