Hopping conduction in Ga4Se3S layered single crystals

Date

2008-11

Author

Qasrawi, A.F.
Hasanlı, Nızamı

Metadata

Show full item record

Item Usage Stats

412
views

0
downloads

The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were found to be 7.20 x 10(15) cm(-3) eV(-1) and 7.56 x 10(-6) cm, respectively. When the sample was illuminated, the Mott's VRH parameters are altered, particularly, the average hopping distance and the density of states near the Fermi level increase when light intensity increases. This action is attributed to the electron generation by photon absorption, which in turn leads to the Fermi level shift and/or trap density reduction by electron-hole recombination.

Subject Keywords

Semiconductors, Crystal growth, Electronic transport

URI

https://hdl.handle.net/11511/28268

Journal

Solid State Communications

DOI

https://doi.org/10.1016/j.ssc.2008.08.021

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Trapping centers and their distribution in Tl2In2Se3S layered single crystals Güler, Işıkhan; Hasanlı, Nızamı (2010-01-01) Thermally stimulated current (TSC) measurements have been carried out on Tl(2)ln(2)Se(3)S layered single crystals in the temperature range of 10-175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps' distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps' distribution can be described as an exponential one. The variations of one order of magnitude in the traps' density for every 30 meV (A peak) and 59...
Temperature-dependent optical properties of GaSe layered single crystals IŞIK, MEHMET; TUĞAY, EVRİN; Gasanly, N. M. (2016-01-01) Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380-1100nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280K. The rate o...
Temperature-dependent optical properties of GaSe layered single crystals Hasanlı, Nızamı (2016-8-01) Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380–1100 nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98 eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280 K. The rat...
Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (2008-11-01) Ga(4)Se(3)S layered crystals were studied through the dark electrical conductivity, and illumination- and temperature-dependent photoconductivity in the temperature region of 100-350 K. The dark electrical conductivity reflected the existence of two energy states located at 3 10 and 60 meV being dominant above and below 170 K, respectively. The photoconductivity measurements revealed the existence of another two energy levels located at 209 and 91 meV above and below 230 K. The photoconductivity was observe...
Compositional dependence of refractive index and oscillator parameters in T1GaS(2x)Se(2(1-x)) layered mixed crystals (0 <= x <= 1) Hasanlı, Nızamı (2012-09-14) Optical characterization of TIGaS2xSe2(1-x) mixed crystals have been carried out at room temperature using the transmission and reflection measurements in the wavelength range of 400-1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependencies of refractive index dispersion parameters: oscillator energy, di...

Citation Formats

A. F. Qasrawi and N. Hasanlı, “Hopping conduction in Ga4Se3S layered single crystals,” Solid State Communications, pp. 190–193, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28268.