Trapping centers and their distribution in Tl2In2Se3S layered single crystals

Date

2010-01-01

Author

Güler, Işıkhan
Hasanlı, Nızamı

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Thermally stimulated current (TSC) measurements have been carried out on Tl(2)ln(2)Se(3)S layered single crystals in the temperature range of 10-175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps' distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps' distribution can be described as an exponential one. The variations of one order of magnitude in the traps' density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined.

Subject Keywords

Semiconductors, Crystal growth, Electronic transport, Recombination and trapping

URI

https://hdl.handle.net/11511/32342

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/j.ssc.2009.10.028

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

I. Güler and N. Hasanlı, “Trapping centers and their distribution in Tl2In2Se3S layered single crystals,” SOLID STATE COMMUNICATIONS, pp. 176–180, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32342.