Trapping centers and their distribution in Tl2In2Se3S layered single crystals

Thermally stimulated current (TSC) measurements have been carried out on Tl(2)ln(2)Se(3)S layered single crystals in the temperature range of 10-175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps' distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps' distribution can be described as an exponential one. The variations of one order of magnitude in the traps' density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined.


Hopping conduction in Ga4Se3S layered single crystals
Qasrawi, A.F.; Hasanlı, Nızamı (Elsevier BV, 2008-11)
The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were...
Trapping center parameters of TlGaSe2 layered crystals
Yuksek, NS; Kavas, H; Hasanlı, Nızamı; Ozkan, H (Elsevier BV, 2004-02-15)
Thermally stimulated current measurements are carried out on as-grown TlGaSe2 layered single crystals in the temperature range of 90-220 K with various heating rates. Experimental evidence is found for the presence of two trapping centers with activation energy 98 and 130 meV. The retrapping process is negligible for these levels, as confirmed by good agreement between the experimental results and theoretical predictions of the model that assumes slow retrapping. The calculation yielded 2.3 x 10(-24) and 1....
Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2009-06-01)
Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl2Ga2Se3S layered single crystals in the temperature range of 10-260K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirme...
Photoelectronic and electrical properties of Tl2InGaS4 layered crystals
Qasrawi, A. F.; Hasanlı, Nızamı (2007-01-01)
Tl2InGaS4 layered crystals are studied through the dark electrical conductivity, space charge limited current and illumination- and temperature-dependent photoconductivity measurements in the temperature regions of 220-350 K, 300-400 K and 200-350 K, respectively. The space charge limited current measurements revealed the existence of a single discrete trapping level located at 0.44 eV. The dark electrical conductivity showed the existence of two energy levels of 0.32 eV and 0.60 eV being dominant above and...
Trapping centers and their distribution in Tl2InGaSe4 single crystals by thermally stimulated luminescence
Delice, S.; IŞIK, MEHMET; Hasanlı, Nızamı (Springer Science and Business Media LLC, 2014-03-01)
Thermoluminescence (TL) measurements in Tl2InGaSe4-layered single crystals have been carried out in the temperature range of 10-200 K at various heating rates (0.2-1.0 K s(-1)) to get information about the characteristics of traps. Two TL overlapping glow peaks related to defect levels have been clearly observed. Thermal cleaning procedure was applied to the glow curves to separate overlapped peaks. Initial rise, peak shape, and heating rate methods were used to calculate the activation energies of the reve...
Citation Formats
I. Güler and N. Hasanlı, “Trapping centers and their distribution in Tl2In2Se3S layered single crystals,” SOLID STATE COMMUNICATIONS, pp. 176–180, 2010, Accessed: 00, 2020. [Online]. Available: