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Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing
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Date
2010-02-26
Author
Arslantunalı Şahin, Damla
Yıldız, İlker
Slaoui, A.
Turan, Raşit
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicket SiO2. layer functioning as a control oxide In this work, we Studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing This is related to the low solubility of Ge In HfO2 Which is observed in other oxides as well Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected
Subject Keywords
Ge
,
Depth profiling
,
Raman spectroscopy
,
Segregation
,
HfO2 XPS
URI
https://hdl.handle.net/11511/29988
Journal
THIN SOLID FILMS
DOI
https://doi.org/10.1016/j.tsf.2009.09.156
Collections
Graduate School of Natural and Applied Sciences, Article
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D. Arslantunalı Şahin, İ. Yıldız, A. Slaoui, and R. Turan, “Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing,”
THIN SOLID FILMS
, pp. 2365–2369, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/29988.