Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing

Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicket SiO2. layer functioning as a control oxide In this work, we Studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing This is related to the low solubility of Ge In HfO2 Which is observed in other oxides as well Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected


Design and implementation of coupled inductor Cuk converter operating in continuous conduction mode
Ayhan, Mustafa Tufan; Ersak, Aydın; Department of Electrical and Electronics Engineering (2011)
The study involves the following stages: First, coupled-inductor and integrated magnetic structure used in Cuk converter circuit topologies are analyzed and the necessary information about these elements in circuit design is gathered. Also, benefits of using these magnetic elements are presented. Secondly; steady-state model, dynamic model and transfer functions of coupled-inductor Cuk converter topology are obtained via state-space averaging method. Third stage deals with determining the design criteria to...
Analysis of surface structures using XPS with external stimuli
Ertaş, Gülay (2006-01-01)
X-ray Photoelectron Spectroscopy, XPS, due to the perfect match of its probe length (1-10 nm) to nanoparticle size, chemical specificity, and susceptibility to electrical charges, is ideally suited for harvesting chemical, physical and electrical information from nanosized surface structures. In addition, by recording XPS spectra while applying external d.c. and/or pulsed voltage stimuli, it is also possible to control the extent of charging and extract various analytical information. In the simplest form, ...
Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputtering
İMER, ALİ; Yerci, Selçuk; ALAGOZ, A. S.; KULAKCI, M.; SERINCAN, U.; FINSTAD, T. G.; Turan, Raşit (2010-01-01)
Structural variations of SiOx matrix have been studied with Fourier Transform Infrared Spectroscopy (FTIR) during the formation of Si and Ge nanocrystal. Two frequently used methods, magnetron sputtering and ion implantation have been employed to form SiOx matrix containing excess Si and Ge. The Si-O-Si stretching mode has been deconvoluted to monitor the evolution of SiOx films during the annealing process. The integrated area and the shift in the SiOx peak positions are found to be well correlated with th...
Stress evolution of Ge nanocrystals in dielectric matrices
Bahariqushchi, Rahim; Raciti, Rosario; KASAPOGLU, Ahmet Emre; GÜR, Emre; Sezen, Meltem; Kalay, Yunus Eren; MIRABELLA, Salvatore; Aydınlı, Alptekin (2018-05-04)
Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N-2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope mi...
Effects of surface potential fluctuations on DLTS of MOS structure
Ozder, S; Atilgan, I; Katircioglu, B (1996-02-01)
Although the conventional large signal deep-level transient spectroscopy (DLTS) technique is immune to surface potential fluctuations resulting from interface charge inhomogeneities in a MOS structure, in energy resolved, small signal DLTS, the eventual surface potential fluctuation should be considered. In this paper, the effect of the potential fluctuation on the temperature-scan DLTS signal for a given gate bias has been carried out. In fact, this effect shifts the DLTS peak position to lower temperature...
Citation Formats
D. Arslantunalı Şahin, İ. Yıldız, A. Slaoui, and R. Turan, “Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing,” THIN SOLID FILMS, pp. 2365–2369, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/29988.