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Mechanism Studies on CVD of Boron Carbide from a Gas Mixture of BCl3, CH4, and H-2 in a Dual Impinging-jet Reactor
Date
2009-03-01
Author
Karaman, Mustafa
Sezgi, Naime Aslı
Doğu, Timur
Ozbelge, Hilmi Onder
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Nearly pure boron carbide free from impurities was produced on a tungsten substrate in a dual impinging-jet chemical vapor deposition reactor from a BCl3, CH4, and H-2 mixture. The Fourier Tran form Infrared (FTIR) analysis proved the formation Of reaction intermediate BHCl2, which is proposed to occur mainly in the gaseous boundary layer next to the substrate surface. Among a large number of reaction mechanisms proposed only the ones considering the molecular adsorption of boron carbide on the substrate surface gave reasonable fits. In the proposed mechanism dichloroborane is formed in the gas phase only as a by-product. Boron carbide, on the other hand, is formed through a series of surface reactions involving adsorbed boron trichloride, adsorbed methane and gas phase hydrogen. The simultaneous fit of the experimental rate data to the model expressions gave correlation coefficient values of 0.977 and 0.948, in predicting the B4C and BHCl2 formation rates, respectively. (c) 2009 American Institute of Chemical Engineers AIChE J, 55: 701-709, 2009
Subject Keywords
Adsorption/gas
,
Deposition methods (CVD, MOCVD)
,
Reaction kinetics
URI
https://hdl.handle.net/11511/30131
Journal
AICHE JOURNAL
DOI
https://doi.org/10.1002/aic.11717
Collections
Graduate School of Natural and Applied Sciences, Article
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Production of beta-rhombohedral boron carbide (B4C) on a tungsten substrate by the chemical vapor deposition from a BCl3-H-2-CH4 gas mixture was achieved. An impinging-jet reactor was used to minimize the mass-transfer limitations on the reaction kinetics, which made a detailed kinetic investigation possible. Results of the XRD and XPS analyses showed that the solid product formed on the substrate is a rhombohedral B4C phase. Both dichloroborane and boron carbide formation rates were found to increase with ...
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Sezgi, Naime Aslı; Dogu, T; Ozbelge, HO (2001-11-01)
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Noyan-Dilek, S; Ozbelge, HO; Sezgi, Naime Aslı; Dogu, T (2001-02-07)
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Mechanism and characterization studies on boron carbides deposited by chemical vapor deposition technique
Karaman, Mustafa; Özbelge, Hilmi Önder; Sezgi, Naime Aslı; Doğu, Timur (2005-12-02)
Boron carbide was produced in an impinging jet CVD reactor from a gas mixture of BCl3, CH4 and H-2. The mass transfer limitations on the reaction kinetics were minimised by the jet impingement on the substrate surface. XPS characterization of the produced deposits revealed a nearly pure boron carbide phase containing small amounts of oxy-boron and oxy-carbon species. After a detailed kinetic study, a reaction model was proposed to predict the rates of boron carbide and dichloroborane formation reactions. In...
Chemical vapor deposition of boron carbide
Karaman, Mustafa; Özbelge, Önder; Department of Chemical Engineering (2007)
Boron carbide was produced on tungsten substrate in a dual impinging-jet CVD reactor from a gas mixture of BCl3, CH4, and H2. The experimental setup was designed to minimise the effect of mass transfer on reaction kinetics, which, together with the on-line analysis of the reactor effluent by FTIR, allowed a detailed kinetic investigation possible. The phase and morphology studies of the products were made by XPS, XRD,micro hardness and SEM methods. XPS analysis showed the existence of chemical states attrib...
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M. Karaman, N. A. Sezgi, T. Doğu, and H. O. Ozbelge, “Mechanism Studies on CVD of Boron Carbide from a Gas Mixture of BCl3, CH4, and H-2 in a Dual Impinging-jet Reactor,”
AICHE JOURNAL
, pp. 701–709, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30131.