Kinetic studies for boron carbide formation in a dual impinging-jet reactor

Date

2001-02-07

Author

Noyan-Dilek, S
Ozbelge, HO
Sezgi, Naime Aslı
Dogu, T

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

35
views

0
downloads

The chemical vapor deposition (CVD) of boron carbide was investigated on a tungsten substrate from a gas mixture of BCl3, H-2, and CH4 in a dual impinging-jet reactor that was connected to an FT-IR spectrometer for on-line analysis of the reactor effluent stream. During CVD of boron carbide, the formation of BHCl2 was experimentally verified, and beta -rhombohedral B4C was formed. Conversion to boron carbide was found to increase with an increase in the BCl3/CH4 ratio. However, conversion to dichloroborane decreased with an increase in the BCl3 concentration in the inlet gas stream. Kinetic data showed that the B4C formation reaction rate is proportional to the 1.85 power of the BCl3 concentration.

Subject Keywords

Chemıcal-vapor-deposıtıon, CVD

URI

https://hdl.handle.net/11511/44254

Journal

INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH

DOI

https://doi.org/10.1021/ie000508a

Collections

Department of Chemical Engineering, Article

Suggestions

OpenMETU
Core

Kinetic investigation of chemical vapor deposition of B4C on tungsten substrate Karaman, Mustafa; Sezgi, Naime Aslı; Doğu, Timur; Ozbelge, H. Onder (2006-12-01) Production of beta-rhombohedral boron carbide (B4C) on a tungsten substrate by the chemical vapor deposition from a BCl3-H-2-CH4 gas mixture was achieved. An impinging-jet reactor was used to minimize the mass-transfer limitations on the reaction kinetics, which made a detailed kinetic investigation possible. Results of the XRD and XPS analyses showed that the solid product formed on the substrate is a rhombohedral B4C phase. Both dichloroborane and boron carbide formation rates were found to increase with ...
Mechanism Studies on CVD of Boron Carbide from a Gas Mixture of BCl3, CH4, and H-2 in a Dual Impinging-jet Reactor Karaman, Mustafa; Sezgi, Naime Aslı; Doğu, Timur; Ozbelge, Hilmi Onder (2009-03-01) Nearly pure boron carbide free from impurities was produced on a tungsten substrate in a dual impinging-jet chemical vapor deposition reactor from a BCl3, CH4, and H-2 mixture. The Fourier Tran form Infrared (FTIR) analysis proved the formation Of reaction intermediate BHCl2, which is proposed to occur mainly in the gaseous boundary layer next to the substrate surface. Among a large number of reaction mechanisms proposed only the ones considering the molecular adsorption of boron carbide on the substrate su...
BHCl2 formation during chemical vapor deposition of boron in a dual-impinging jet reactor Sezgi, Naime Aslı; Ozbelge, HO (1997-12-01) Chemical vapor deposition (CVD) of boron from BCl3 and Hz was investigated in a dual-impinging jet reactor which was connected to an FT-IR spectrometer for on-line chemical analysis of the reactor outlet stream. Formation of the intermediate, BHCl2, during CVD of boron on a hot tungsten substrate was experimentally verified, Boron deposition started at substrate temperatures of around 750 degrees C and showed a significant deposition rate increase with an increase in temperature. At a surface temperature of...
CVD of boron and dichloroborane formation in a hot-wire fiber growth reactor Sezgi, Naime Aslı; Dogu, T; Ozbelge, HO (2001-11-01) Chemical vapor deposition (CVD) of boron by hydrogen reduction of BCl, on a hot tungsten substrate was investigated in a parallel flow reactor. Effect of substrate temperature (1100-1250 degreesC) on the relative rates of formation of BHCl2 and boron was observed by the on-line analysis of the reactor effluent stream composition using an FT-IR spectrophotometer. It was concluded that BHCl2 was majorly formed in the gas phase within the thermal boundary layer adjacent to the substrate with possible contribut...
Chemical vapor deposition of boron carbide Karaman, Mustafa; Özbelge, Önder; Department of Chemical Engineering (2007) Boron carbide was produced on tungsten substrate in a dual impinging-jet CVD reactor from a gas mixture of BCl3, CH4, and H2. The experimental setup was designed to minimise the effect of mass transfer on reaction kinetics, which, together with the on-line analysis of the reactor effluent by FTIR, allowed a detailed kinetic investigation possible. The phase and morphology studies of the products were made by XPS, XRD,micro hardness and SEM methods. XPS analysis showed the existence of chemical states attrib...

Citation Formats

S. Noyan-Dilek, H. Ozbelge, N. A. Sezgi, and T. Dogu, “Kinetic studies for boron carbide formation in a dual impinging-jet reactor,” INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH, pp. 751–755, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44254.