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Kinetic studies for boron carbide formation in a dual impinging-jet reactor
Date
2001-02-07
Author
Noyan-Dilek, S
Ozbelge, HO
Sezgi, Naime Aslı
Dogu, T
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The chemical vapor deposition (CVD) of boron carbide was investigated on a tungsten substrate from a gas mixture of BCl3, H-2, and CH4 in a dual impinging-jet reactor that was connected to an FT-IR spectrometer for on-line analysis of the reactor effluent stream. During CVD of boron carbide, the formation of BHCl2 was experimentally verified, and beta -rhombohedral B4C was formed. Conversion to boron carbide was found to increase with an increase in the BCl3/CH4 ratio. However, conversion to dichloroborane decreased with an increase in the BCl3 concentration in the inlet gas stream. Kinetic data showed that the B4C formation reaction rate is proportional to the 1.85 power of the BCl3 concentration.
Subject Keywords
Chemıcal-vapor-deposıtıon
,
CVD
URI
https://hdl.handle.net/11511/44254
Journal
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
DOI
https://doi.org/10.1021/ie000508a
Collections
Department of Chemical Engineering, Article