Optimization of in-device depleted passivation layer for InGaAs photodetectors

Date

2019-03-01

Author

Çırçır, Kübra
Kocaman, Serdar

Metadata

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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Subject Keywords

In-device passivation, Dark current suppression, Photodetector, InGaAs/InP, SWIR

URI

https://hdl.handle.net/11511/30524

Journal

Infrared Physics and Technology

DOI

https://doi.org/10.1016/j.infrared.2018.12.024

Collections

Graduate School of Natural and Applied Sciences, Article

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Fully Depleted InP Nano-Layer for In-Device Passivation of InGaAs SWIR Detectors Dolas, M. Halit; Kocaman, Serdar (2017-12-01) We designed a p-n InGaAs/InP heterojunction photodiode with a novel passivation approach that employs a thin and fully depleted in-device (embedded in the p-n structure) p-InP layer. We comparatively characterized mesa-type detector pixels and experimentally observed expected passivating behavior. Characterization results under illumination indicated that fully depleted p-InP layer increases photo-current as well due to increasing device active area. Dark current analysis of detector pixels with different a...

Citation Formats

K. Çırçır and S. Kocaman, “Optimization of in-device depleted passivation layer for InGaAs photodetectors,” Infrared Physics and Technology, pp. 360–364, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30524.