Electrical crosstalk suppression for mesa-based in-device passivated InGaAs photodetectors

Date

2022-12-01

Author

Çırçır, Kübra
Kocaman, Serdar

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Inclusion of an in-device passivation layer in mesa-based lattice-matched InGaAs photodetectors provides a lower dark current than the conventional mesa type structures. However, due to the high electric field in the passivation layer between the pixels, improved dark current characteristics come with increased electrical crosstalk. Manipulating the electrical field distribution with an additional thin epilayer promises to reduce this inter-pixel carrier collection without disturbing the primary aim of the passivation layer, which is to reduce the dark current through the depleted condition. An experimental-like scanning demonstration with a five-pixel mini array numerically shows a significant decrease in electrical crosstalk together with an increase in photo-response.

Subject Keywords

Short wavelength infrared, InGaAs, InP, Photodetector, Planar and mesa type, In-device passivation, Dark current reduction, Crosstalk suppression, HGCDTE, PHOTODIODE, IN0.53GA0.47AS, LAYER, ARRAY

URI

https://hdl.handle.net/11511/100204

Journal

INFRARED PHYSICS & TECHNOLOGY

DOI

https://doi.org/10.1016/j.infrared.2022.104355

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

K. Çırçır and S. Kocaman, “Electrical crosstalk suppression for mesa-based in-device passivated InGaAs photodetectors,” INFRARED PHYSICS & TECHNOLOGY, vol. 127, pp. 0–0, 2022, Accessed: 00, 2022. [Online]. Available: https://hdl.handle.net/11511/100204.