Optimization of Mesa Structured InGaAs Based Photodiode Arrays

Date

2017-04-13

Author

Dolas, M. Halit
Çırçır, Kübra
Kocaman, Serdar

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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We design lattice matched InP/In0.53Ga0.47As mesa structured heterojunction p-n photodiodes with a novel passivation methodology based on a fully depleted thin p-InP layer. Mesa-structured detectors are targeted due to their competitive advantages for applications such as multicolor/hyperspectral imaging. Test detector pixels with different perimeter/area ratios are fabricated with and without etching thin InP passivation layer between pixels in order to comparatively examine passivating behavior. I-V characteristics of the test detectors are measured at room temperature. Based on the results from different sized pixel groups, bulk and surface dark current components are separated. Results show that thin InP layer decreases dark current by a factor of 3 while increasing photo current due to a higher carrier collection efficiency.

Subject Keywords

SWIR, P-n diodes, InP passivation, In-device passivation, InGaAs, Heterojunction, Fully depleted passivation

URI

https://hdl.handle.net/11511/30465

DOI

https://doi.org/10.1117/12.2262499

Conference Name

Conference on Image Sensing Technologies - Materials, Devices, Systems, and Applications IV

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

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Citation Formats

M. H. Dolas, K. Çırçır, and S. Kocaman, “Optimization of Mesa Structured InGaAs Based Photodiode Arrays,” Anaheim, CA, 2017, vol. 10209, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30465.