The effect of Zn concentration on the structural and optical properties of Cd1-xZnxS nanostructured thin films

Date

2021-09-01

Author

Isik, M.
Terlemezoglu, M.
Isik, S.
Erturk, K.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

118
views

0
downloads

The structural and optical properties of electrodeposited Cd1-xZnxS nanostructured thin films were investigated in the present paper for compositions of x = 0, 0.03, 0.06 and 0.09. X-ray diffraction patterns of the deposited thin films consisted of diffraction peaks related to cubic crystal lattice. The atomic compositional ratios were determined by performing energy dispersive spectroscopy measurements. Scanning electron microscopy images indicated that deposited thin films have nanostructured forms. Raman spectra of the Cd1-xZnxS thin films exhibited two vibrational modes associated with longitudinal optical mode and its first overtone. Transmission measurements were performed on the deposited thin films to get their band gap energies. It was seen from the analyses of absorption coefficient that band gap energy of Cd1-xZnxS thin films increases almost linearly from 2.40 to 2.51 eV as the composition was increased from x = 0 to x = 0.09.

URI

https://hdl.handle.net/11511/92248

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-021-06980-6

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

The effect of Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by solution deposition Kayasu, Volkan; Özenbaş, Ahmet Macit (2009-04-01) Niobium (Nb)-doped lead zirconate titanate thin films (PNZT) were produced by solution deposition with nominal compositions, Pb(1-0.5x)(Zr0.53Ti0.47)(1-x)NbxO3 where x = 0.00-0.07. The effects of sintering temperature, sintering time, variation of thickness in the films and change of niobium content were investigated with regard to phase development, microstructure, and ferroelectric and dielectric characteristics. The best results were obtained in double-layered films (390 nm) sintered at 600 degrees C for...
The evolution of the magnetic moment in a corrugated magnetic field Demokan, O; Mirnov, VV (1997-09-01) In the first part, the equations of motion in a weakly corrugated, periodic magnetic field are linearized and solved by using paraxial approximation, to describe the model and the associated resonance condition. In the second part, the nonlinear evolution of the magnetic moment of resonant particles, in connection with their axial displacement is investigated analytically by using the multiple scale method. It is seen that the linear evolution is converted into a slow and periodic oscillation around the unp...
The Effect of Thickness and Doping on the Nonlinear Absorption Behaviour of IIIA-VIA Group Amorphous Semiconductor Thin Films Kurum, Ulas; YAĞLIOĞLU, HALİME GÜL; YÜKSEK, MUSTAFA; ELMALI, Ayhan; Ates, Aytunc; KARABULUT, MEVLÜT; Mamedov, Gasan M.; Hasanlı, Nızamı (2011-06-30) The nonlinear optical absorption of InSe, GaSe and GaxIn1-xSe amorphous films with varying thickness and doping has been studied by open-aperture Z-scan experiment with 4 ns and 65 ps pulse durations at 1064 nm wavelength and femtosecond pump-probe spectroscopy. Our results show that the dopant and film thickness (from 20 nm to 104 nm) results in switching from saturable absorption to nonlinear absorption for equal input intensities. This behaviour is attributed to increasing localized defect states with in...
The effect of film thickness, Se/S ratio and annealing temperature on the nonlinear absorption behaviors in amorphous GaSexS1-x (0 <= x <= 1) thin films Isik, Pinar; KARATAY, AHMET; YAĞLIOĞLU, HALİME GÜL; ELMALI, Ayhan; Kurum, Ulas; ATEŞ, AYTÜNÇ; Hasanlı, Nızamı (2013-02-01) The amorphous GaSexS1-x (0 <= x <= 1) semiconductor thin films were prepared with different thickness by using vacuum evaporation technique. The nonlinear absorption properties of the films were studied by Z-scan and ultrafast pump-probe techniques. Linear absorption measurements showed blue shift in energy as the film thickness increased. This can be attributed quantum confinement effect due to particle size decreasing with increasing film thickness. Pure GaSe and GaSexS1-x films exhibit saturable absorpti...
The electronic and optical properties of MB12 (M = Zr, Hf, Y, Lu) dodecaboride compounds Korozlu, N.; Sürücü, Gökhan (2013-01-01) We have presented the results of ab initio investigations on the structural, electronic and optical properties of MB12 (M = Zr, Hf, Y, Lu) dodecaboride compounds. Especially, the lattice parameters, bond distances, bulk modulus, electronic band structure, density of state, optical properties and their related quantities such as dielectric constants, refraction index and energy-loss function are calculated, and it is shown that the compounds have a metallic character and a large static dielectric constant. O...

Citation Formats

M. Isik, M. Terlemezoglu, S. Isik, K. Erturk, and N. Hasanlı, “The effect of Zn concentration on the structural and optical properties of Cd1-xZnxS nanostructured thin films,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 0–0, 2021, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/92248.