Thermal conductivity and photoluminescence of light-emitting silicon nitride films

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2012-01-30

Author

Marconnet, Amy
Panzer, Matt
Yerci, Selçuk
Minissale, Salvatore
Wang, X.
Zhang, X.
Dal Negro, Luca
Goodson, K. E.

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Silicon-rich and rare-earth-doped nitride materials are promising candidates for silicon-compatible photonic sources. This work investigates the thermal conductivity and photoluminescence (PL) of light emitting samples fabricated with a range of excess silicon concentrations and annealing temperatures using time-domain picosecond thermoreflectance and time-resolved photoluminescence. A direct correlation between the thermal conductivity and photoluminescence dynamics is demonstrated, as well as a significant reduction of thermal conductivity upon incorporation of erbium ions. These findings highlight the role of annealing and stoichiometry control in the optimization of light emitting microstructures suitable for the demonstration of efficient Si-compatible light sources based on the silicon nitride platform. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3682508]

URI

https://hdl.handle.net/11511/30847

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.3682508

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

A. Marconnet et al., “Thermal conductivity and photoluminescence of light-emitting silicon nitride films,” APPLIED PHYSICS LETTERS, pp. 0–0, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30847.