Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Date

2006-08-01

Author

ROSINSKI, MARCİN
BADZIAK, JAN
CZARNECKA, ANNA
GASİOR, PİETR
PARYS, PİETR
PISAREK, MARCİN
Turan, Raşit
WOLOWSKI, JERY
Yerci, Selçuk

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.

Subject Keywords

Laser-Matter Interaction, Laser Ion Source

URI

https://hdl.handle.net/11511/31293

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2006.08.051

Collections

Graduate School of Natural and Applied Sciences, Article