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Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses
Date
2006-08-01
Author
ROSINSKI, MARCİN
BADZIAK, JAN
CZARNECKA, ANNA
GASİOR, PİETR
PARYS, PİETR
PISAREK, MARCİN
Turan, Raşit
WOLOWSKI, JERY
Yerci, Selçuk
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Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.
Subject Keywords
Laser-Matter Interaction
,
Laser Ion Source
URI
https://hdl.handle.net/11511/31293
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
DOI
https://doi.org/10.1016/j.mssp.2006.08.051
Collections
Graduate School of Natural and Applied Sciences, Article
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M. ROSINSKI et al., “Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses,”
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
, pp. 655–658, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31293.