Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

Date

2006-08-01

Author

ROSINSKI, MARCİN
BADZIAK, JAN
CZARNECKA, ANNA
GASİOR, PİETR
PARYS, PİETR
PISAREK, MARCİN
Turan, Raşit
WOLOWSKI, JERY
Yerci, Selçuk

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Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.

Subject Keywords

Laser-Matter Interaction, Laser Ion Source

URI

https://hdl.handle.net/11511/31293

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2006.08.051

Collections

Graduate School of Natural and Applied Sciences, Article

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Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials Rosinski, Marcin; Wolowski, Jerzy; Yerci, Selçuk; Parys, Piotr; Turan, Raşit; Badziak, Jan; Czarnecka, Agata; Gasior, Pawel; Pisarek, Marcin (2008-12-01) Laser plasma has been proved to be a potential source of multiply charged ions which could support the growing demands for high-current ion beams. To optimize efficiency of the ion implantation technology selection of proper laser beam characteristics is very important and should be investigated. With LIS, several variables can and must be controlled. The properties of ions (current densities, the ion charge state, angular and energy distributions) depend on target material and the laser energy, pulse durat...
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Citation Formats

M. ROSINSKI et al., “Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 655–658, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31293.