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Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses

2006-08-01
ROSINSKI, MARCİN
BADZIAK, JAN
CZARNECKA, ANNA
GASİOR, PİETR
PARYS, PİETR
PISAREK, MARCİN
Turan, Raşit
WOLOWSKI, JERY
Yerci, Selçuk
Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.