Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials

Date

2008-12-01

Author

Rosinski, Marcin
Wolowski, Jerzy
Yerci, Selçuk
Parys, Piotr
Turan, Raşit
Badziak, Jan
Czarnecka, Agata
Gasior, Pawel
Pisarek, Marcin

Metadata

Show full item record

Item Usage Stats

159
views

0
downloads

Laser plasma has been proved to be a potential source of multiply charged ions which could support the growing demands for high-current ion beams. To optimize efficiency of the ion implantation technology selection of proper laser beam characteristics is very important and should be investigated. With LIS, several variables can and must be controlled. The properties of ions (current densities, the ion charge state, angular and energy distributions) depend on target material and the laser energy, pulse duration and intensity on the target surface. So, the characteristics of laser-produced ion streams should be determined with the use of precise ion diagnostic methods. Based on the preliminary results for acceleration of ions produced with the use of a repetitive laser system at IPPLM the special electrostatic-acceleration system has been designed and prepared. This device permits to accelerate ions having charge states of 1+ to energies up to ∼40 keV. The movable target holder was located inside the cylindrical box connected with a high-voltage source (up to 50 kV at 50 mA). The accelerated Ge and Si ions was implanted to SiO2/Si substrates and analyzed. This contribution is concerned mainly on the analysis and optimization of laser-produced Ge and Si ion streams as well as on investigation of the direct implantation of these ions into SiO2 substrates. Targets were irradiated with the use of repetitive (up to 10 Hz) laser with energy up to 700 mJ in one pulse, at radiation intensities of ∼1011 W/cm2. The ion stream parameters were measured using the time-of-fight method. The depth of ion implantation was determined by X-Ray Photoelectron Spectroscope (XPS). After the implantation the samples were annealed in different temperatures in range of to create nanocrystal structures and then analyzed by means of Raman Spectroscopy, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The work has been performed within SEMINANO project supported by EC (within 6FP).

Subject Keywords

Ion-implantation, Laser ablation, Nanostructure

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=67649305189&origin=inward
https://hdl.handle.net/11511/74270

DOI

https://doi.org/10.1557/PROC-1054-FF05-26

Conference Name

Symposium FF – Synthesis and Surface Engineering of Three-Dimensional Nanostructures ( 2007)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses ROSINSKI, MARCİN; BADZIAK, JAN; CZARNECKA, ANNA; GASİOR, PİETR; PARYS, PİETR; PISAREK, MARCİN; Turan, Raşit; WOLOWSKI, JERY; Yerci, Selçuk (2006-08-01) Due to the growing demands for high-current ion beams, laser plasma as a potential source of multiple charged ions has been investigated. Selection of proper laser beam characteristics is very important for efficiency of the ion implantation technology.
Pumping chamber design in diode pumped solid-state lasers for maximum system efficiency and minimum optical distortion Zengin, Kubilay; Sayan, Gönül; Yelen, Kuthan; Department of Electrical and Electronics Engineering (2013) The beam quality and the system efficiency of a diode-pumped solid-state laser source are directly related to the thermal profile inside the laser crystal. The thermal profile in a laser crystal should be made uniform in order to reduce the negative effects of the thermal lens. However, the absorbed pump profile that forms a uniform thermal profile inside the gain medium may adversely affect the system efficiency. In this thesis, a computational and empirical method was developed for designing pumping chamb...
Application of pulsed laser deposition and laser-induced ion implantation for formation of semiconductor nano-crystallites WOLOWSKI, JERY; BADZIAK, JAN; CZARNECKA, ANNA; PARYS, PİETR; PISAREK, MARCİN; ROSINSKI, MARCİN; Turan, Raşit; Yerci, Selçuk (2007-03-01) This work describes the application of laser ion source (LIS) for fabrication of semiconductor nanostructures, as well as relevant equipment completed and tested in the IPPLM for the EU STREP "SEMINANO" project and the obtained experimental results. A repetitive Pulse laser system of parameters: energy of similar to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 mu m, repetition rate of up to 10 Hz and intensity on the target of up to 10(11) W/cm(2), has been employed to produce Ge ions intended for ion implan...
Simulation of thermal, mechanical and optical behavior of yag ceramics with increasing Nd3+ concentration under lasing conditions. Kenar, Necmettin; Öke, Gülay; Department of Physics (2007) Two-dimensional thermal, mechanical and optical simulations are carried out to investigate the effect of Nd3+ concentration on thermal, mechanical and optical behavior of Nd:YAG ceramic laser materials under continuous wave laser operation. In the analyses, rods are pumped longitudinally with laser diodes, in three, six, nine and twelve fold structures. Rods having diameters of 3 and 6 mm are pumped with 808 nm and 885 nm sources separately having Nd+3 concentrations of 0.6, 1, 2, 3, 4 and 6 at. %. Total ab...
Comparative study on surface enhanced raman scattering activity of various silver nanostructures Demirtaş, Özge; Bek, Alpan; Taşgın, Mehmet Emre; Department of Physics (2017) In this work, the effect of the strong field enhancement generated in the near field of metal nanoparticles and nanowires was investigated by taking advantage of the plasmon frequencies induced by Raman laser light stimulation of free conduction electrons of these metal nanostructures. Small number of molecules that are either bound to these nanostructures or located up to a few nanometers away from the nanostructures can be detected easily through strong electromagnetic field enhancement. The aim of this w...

Citation Formats

M. Rosinski et al., “Implantation and sputtering of ge and si ions into SiO2 substrates using electric fields for acceleration and optimisation of laser-produced Ion streams used for modification of semiconductor materials,” 2008, vol. 1054, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=67649305189&origin=inward.