All InGaAs Unipolar Barrier Infrared Detectors

Date

2018-04-01

Author

Uzgur, Fatih
Kizilkan, Ekin
Kocaman, Serdar

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Unipolar barrier detector design is a challenge for InGaAs material system since there is a lack of proper barrier material that blocks majority carriers and allows unimpeded flow of minority carriers. As a bandgap engineering solution, Al/Sb free all InGaAs unipolar barrier detectors have been numerically designed here by compositionally graded and delta-doped layers. Comparison with conventional heterojunction detectors results that there is at least one order of magnitude improvement in dark current without compromising any photoresponse performance. Detailed simulation characterization studies including sensitivity analysis with respect to the design parameters verify the robustness of the proposed structure.

Subject Keywords

Compositional grading, Delta doping, Infrared detectors, InGaAs, Unipolar barrier

URI

https://hdl.handle.net/11511/32464

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

DOI

https://doi.org/10.1109/ted.2018.2804483

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

F. Uzgur, E. Kizilkan, and S. Kocaman, “All InGaAs Unipolar Barrier Infrared Detectors,” IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 1397–1403, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32464.