Al/Sb Free InGaAs Unipolar Barrier Infrared Detectors

Date

2017-04-13

Author

Uzgur, Fatih
Kizilkan, Ekin
Kocaman, Serdar

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

143
views

0
downloads

It is numerically shown that Al/Sb free InGaAs unipolar barrier detectors with superior performance compared to the conventional heterojunction detectors can be constructed. Compositionally graded layers provide the transition between the high bandgap InGaAs barrier and the lattice matched InGaAs absorber layers. In addition, the delta doped layers remove the valence band offset in order to block only majority carriers and allow unimpeded flow of minority carriers. More than one order of magnitude reduction in the dark current is observed while photocurrent remains nearly unchanged. Proposed barrier structure utilized in this study is not limited to short wave infrared (SWIR) and can be applied to a variety of materials operating in various infrared regions.

Subject Keywords

Infrared detectors, Unipolar barriers, NBn, Compositional grading, Delta doping

URI

https://hdl.handle.net/11511/31937

DOI

https://doi.org/10.1117/12.2262519

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

Suggestions

OpenMETU
Core

All InGaAs Unipolar Barrier Infrared Detectors Uzgur, Fatih; Kizilkan, Ekin; Kocaman, Serdar (2018-04-01) Unipolar barrier detector design is a challenge for InGaAs material system since there is a lack of proper barrier material that blocks majority carriers and allows unimpeded flow of minority carriers. As a bandgap engineering solution, Al/Sb free all InGaAs unipolar barrier detectors have been numerically designed here by compositionally graded and delta-doped layers. Comparison with conventional heterojunction detectors results that there is at least one order of magnitude improvement in dark current with...
A Dual-Band HgCdTe nBn Infrared Detector Design Uzgur, Fatih; Kocaman, Serdar (2019-01-01) Low dark current and/or high operating temperature are the main motivations behind the nBn detector structures where removing the valence band discontinuity is usually an important design challenge. With the utilization of the bias polarity, these structures can also be easily designed as dual-band detectors and in this study, a dual-band (MWIR / LWIR) HgCdTe nBn detector configuration has been numerically examined. Valence band barrier suppression has been obtained with the delta-doped and compositional gr...
Characterization and performance of germanium detectors with sub-keV sensitivities for neutrino and dark matter experiments Soma, A. K.; et. al. (2016-11-11) Germanium ionization detectors with sensitivities as low as 100.eV(ee) (electron-equivalent energy) open new windows for studies on neutrino and dark matter physics. The relevant physics subjects are summarized. The detectors have to measure physics signals whose amplitude is comparable to that of pedestal electronic noise. To fully exploit this new detector technique, various experimental issues including quenching factors, energy reconstruction and calibration, signal triggering and selection as well as e...
III-V infrared detectors on Si substrates Beşikci, Cengiz (2000-01-28) There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also eliminates the need for yield lowering substrate thinning process in hybrid integration. While the large lattice mismatch between Si and these materials seems to be an important obstacle for growing device quality material on Si, encouraging results have been achiev...
Low-cost uncooled infrared detector arrays in standard CMOS Eminoglu, S; Tanrikulu, MY; Akın, Tayfun (2003-04-25) This paper reports the development of a low-cost 128 x 128 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated CMOS p(+)-active/n-well diodes. The FPA is fabricated using a standard 0.35 mum CMOS process followed by simple post-CMOS bulk micromachining that does not require any critical lithography or complicated deposition steps; and therefore, the cost of the uncooled FPA is almost equal to the cost of the CMOS chip. The post-CMOS fabrication steps include an RIE etching to...

Citation Formats

F. Uzgur, E. Kizilkan, and S. Kocaman, “Al/Sb Free InGaAs Unipolar Barrier Infrared Detectors,” 2017, vol. 10177, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31937.