A Dual-Band HgCdTe nBn Infrared Detector Design

Date

2019-01-01

Author

Uzgur, Fatih
Kocaman, Serdar

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Low dark current and/or high operating temperature are the main motivations behind the nBn detector structures where removing the valence band discontinuity is usually an important design challenge. With the utilization of the bias polarity, these structures can also be easily designed as dual-band detectors and in this study, a dual-band (MWIR / LWIR) HgCdTe nBn detector configuration has been numerically examined. Valence band barrier suppression has been obtained with the delta-doped and compositional graded layers similar to the recent single band studies.

Subject Keywords

Infrared detectors, HgCdTe, Dual-band, Unipolar barrier, NBn, Compositional grading, Delta-doping

URI

https://hdl.handle.net/11511/29915

DOI

https://doi.org/10.1117/12.2529240

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

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Citation Formats

F. Uzgur and S. Kocaman, “A Dual-Band HgCdTe nBn Infrared Detector Design,” 2019, vol. 11129, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/29915.