Photoelectronic and electrical properties of Tl2InGaS4 layered crystals

Date

2007-01-01

Author

Qasrawi, A. F.
Hasanlı, Nızamı

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Tl2InGaS4 layered crystals are studied through the dark electrical conductivity, space charge limited current and illumination- and temperature-dependent photoconductivity measurements in the temperature regions of 220-350 K, 300-400 K and 200-350 K, respectively. The space charge limited current measurements revealed the existence of a single discrete trapping level located at 0.44 eV. The dark electrical conductivity showed the existence of two energy levels of 0.32 eV and 0.60 eV being dominant above and below 300 K, respectively. The photoconductivity measurements reflected the existence of two other energy levels located at 0.28 eV and 0.19 eV at high and low temperatures, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature of 330 K. The illumination dependence of photoconductivity is found to exhibit supralinear recombination in all the studied temperature ranges. The change in recombination mechanism is attributed to exchange in the behavior of sensitizing and recombination centers.

Subject Keywords

Semiconductors, Electronic states (localized), Photoconductivity and photovoltaic, Recombination and trapping

URI

https://hdl.handle.net/11511/33083

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/j.ssc.2006.10.011

Collections

Department of Physics, Article

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Citation Formats

A. F. Qasrawi and N. Hasanlı, “Photoelectronic and electrical properties of Tl2InGaS4 layered crystals,” SOLID STATE COMMUNICATIONS, pp. 117–121, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33083.